Platform and method of operating for integrated end-to-end self-aligned multi-patterning process

ABSTRACT

A method is provided for self-aligned multi-patterning on a semiconductor workpiece using an integrated sequence of processing steps executed on a common manufacturing platform hosting film-forming modules, etching modules, and transfer modules. A workpiece having a mandrel pattern formed thereon is received into the common manufacturing platform. A sidewall spacer pattern is formed based, at least in part, on the mandrel pattern, the sidewall spacer pattern having a plurality of second features separated by a second pitch distance with the first pitch distance being greater than the second pitch distance. The integrated sequence of processing steps is executed within the common manufacturing platform without leaving the controlled environment and the transfer modules are used to transfer the workpiece between the processing modules while maintaining the workpiece within the controlled environment. Broadly, using selective/conformal deposition, etching, or implanting techniques to form a sidewall spacer pattern on a common manufacturing platform.

CROSS-REFERENCE TO RELATED APPLICATIONS

The present application claims the benefit of U.S. ProvisionalApplication No. 62/645,685, filed on Mar. 20, 2018, entitled “SubstrateProcessing Tool with Integrated Metrology and Method of Using,” U.S.Provisional Application No. 62/784,151, filed on Dec. 21, 2018 entitled“Platform and Method for Operating for Integrated End-to-End SelfAligned Multiple Patterning Process,” U.S. Provisional Application No.62/787,607, filed on Jan. 2, 2019, entitled “Self-Aware and CorrectingHeterogeneous Platform incorporating Integrated Semiconductor ProcessingModules and Method for using same,” U.S. Provisional Application No.62/787,608, filed on Jan. 2, 2019, entitled “Self-Aware and CorrectingHeterogeneous Platform incorporating Integrated Semiconductor ProcessingModules and Method for using same,” and U.S. Provisional Application No.62/788,195, filed on Jan. 4, 2019, entitled “Substrate Processing Toolwith Integrated Metrology and Method of using,” which is incorporatedherein by reference in its entirety.

BACKGROUND OF THE INVENTION Field of Invention

The present invention relates to a processing platform and methods forsemiconductor processing using the platform, and more particularly to amethod for self-aligned multi-patterning (SAMP).

Description of Related Art

SAMP techniques have been used for formation of components of fin-typefield effect transistor (FinFET) devices, and the like. Dimensionshrinkage is one of the driving forces in the development of integratedcircuit processing. By reducing the size dimensions, cost-benefit anddevice performance boosts can be obtained. This scalability createsinevitable complexity in process flow, especially on patterningtechniques. As smaller transistors are manufactured, the criticaldimension (CD) or resolution of patterned features is becoming morechallenging to produce, particularly in high volume. Self-alignedpatterning needs to replace overlay-driven patterning so thatcost-effective scaling can continue. Patterning options that enablereduced variability, extend scaling, and enhance CD and process controlare needed in a high-volume manufacturing environment; however, it isgetting extremely difficult to produce scaled devices at reasonably lowcost and high yield.

Conventional SAMP flow has several steps, including mandrel (or core)formation, spacer deposition, spacer etch, and mandrel pull. In thisapproach, the final feature critical dimension (CD) is controlled byworkpiece attributes, including spacer deposition thickness and spacerphysical features, such as line edge roughness (LER) and line widthroughness (LWR). Additionally, spacer etch often suffers distortion ofthe final spacer profile such as spacer facet and CD loss. It isimportant to sustain the spacer profile and CD because spacer profilehas a substantial impact on pitch-walking effect, mask budget and CDtargeting on the final structure. Further issues with processingtechniques include spacer height loss due to non-uniform etch and lackof selectivity between the core material and the spacer material.Additionally, inadequate etch of spacer material may result in spacerfootings, core-to-spacer step height differences, and the like. Suchmanufacturing defects may cause further device defects, reduce productproduction rates, limit the scale of manufactural devices, etc. Withmultiple operations in the SAMP process flow, temporal tool drift is aproblem, specifically edge placement error (EPE) may exceed apermissible level. EPE is the difference between the intended design andthe actual results and is defined as the sum of variations that inducesplacement error of blocking mask and process shift. EPE is representedby a numerical value, and a target EPE value is defined for a givenprocess flow. In simple terms, EPE is equal to the combination ofvarious metrics—CD uniformity, overlay, line-edge roughness (LER) andvariation.

As devices are scaled to smaller and smaller features and techniques areimplemented to try and address the issues that result from scaling, itis important to monitor the fabrication process at various stages of theprocess flow to determine whether the feature attributes are withinspecification, and if not, to adjust the process to either bring theworkpiece within specification or to bring subsequently processedworkpieces within specification.

In conventional SAMP, the process is performed using multiple separatestand-alone tools for high-volume manufacturing. Wafers are sequentiallyloaded into one tool, subjected to one process step in that tool, thenremoved to ambient environment and placed in queue to be loaded into thenext tool, and so on until the multiple steps of the SAMP flow arecomplete. Time spent waiting in queue for each tool is referred to asQ-time, and high Q-times result in lower production rates. Differentoperations in the process flow may take different amounts of time suchthat throughput matching of tools is a production challenge.

Each tool in the process flow may be part of a tool cluster. Forexample, five identical etch tools can be clustered in combination witha transfer tool so that 5 wafers can be etched concurrently at one stepof the process flow to enable high-volume production. The multiplicityof these cluster tools provides a benefit if a tool goes out of servicefor any reason. If 1 tool in a 5-tool cluster goes out of service for 1week, then production can continue, albeit at only 80% capacity. Thus,each stand-alone tool in the SAMP flow may be a cluster of identicaltools to prevent an out of service tool from shutting down productioncompletely, and clustering may be used to minimize throughput matchingchallenges.

In conventional SAMP, if measurements are needed to determine whetherthe process is operating within specification, a stand-alone metrologytool may be included, where a workpiece is periodically removed from theprocess flow for measurements to be taken, which are often destructivemeasurements using a measurement pad on the workpiece, and the resultscan be fed back to the process flow tools for adjustments to downstreamsteps in the process flow, or adjustments to upstream steps for futurewafers. This process involves exposure to the ambient environment,Q-time waiting for the metrology tool to be available, and lengthymeasurement times for results to be obtained, such that significant timemay pass before data is available to enable adjustments to be made tothe process flow in either a feed-back or feed-forward manner. Whilereal-time measurements of workpiece attributes taken in the processchamber would be ideal, exposure of the measurement devices to processgases is problematic, making real-time, in situ measurement and controllogistically difficult or impossible.

Thus, the conventional approach of using multiple separate stand-alonetools (single or clustered) for high-volume manufacturing can lead toissues including but not limited to Q-time oxidation (i.e., as thewafers sit between tools waiting for their turn in the next tool, theycan be subjected to oxidation from the ambient environment), defectivityfrom environmental exposure between tools, cost challenges due tothroughput matching difficulties, temporal tool drift (e.g., EPE), realtime chamber matching (e.g., yield and EPE), and lack of real-timeworkpiece measurement and process control. There is a need to addressthese and other issues to enable high-volume manufacturing with SAMPtechniques.

SUMMARY OF THE INVENTION

According to embodiments, a method of self-aligned multi-patterning on asemiconductor workpiece is provided using an integrated sequence ofprocessing steps executed on a common manufacturing platform hosting aplurality of processing modules including one or more film-formingmodules, one or more etching modules, and one or more transfer modules.In one embodiment, the integrated sequence of processing steps includesreceiving a workpiece into the common manufacturing platform, theworkpiece having a mandrel pattern formed thereon comprising a number offeatures separated by a first pitch distance, and using the one or morefilm-forming modules and the one or more etching modules, forming asidewall spacer pattern based, at least in part, on the mandrel pattern,the sidewall spacer pattern comprising a plurality of second featuresseparated by a second pitch distance with the first pitch distance beinggreater than the second pitch distance. The integrated sequence ofprocessing steps is executed in a controlled environment within thecommon manufacturing platform and without leaving the controlledenvironment, and the one or more transfer modules are used to transferthe workpiece between the plurality of processing modules whilemaintaining the workpiece within the controlled environment.

In another embodiment in which a workpiece having a mandrel patternformed thereon comprising a number of mandrel lines is received into thecommon manufacturing platform, the integrated sequence of processingsteps further includes conformally applying a first thin film over themandrel pattern using a first film-forming module hosted on the commonmanufacturing platform and, without breaking vacuum, removing the firstthin film from upper surfaces of the mandrel pattern and lower surfacesadjacent the mandrel pattern using a first etching module hosted on thecommon manufacturing platform to leave behind the first thin film onsidewalls of the mandrel pattern thereby forming first sidewall spacers.Then, without breaking vacuum, the mandrel pattern is removed from theworkpiece using a second etching module hosted on the commonmanufacturing platform to leave behind the first sidewall spacers tothereby form a new feature pattern comprising a number of features thatis double the number of mandrel lines. The one or more transfer modulesare used to transfer the workpiece between the first film-formingmodule, the first etching module, and the second etching module withoutbreaking vacuum.

In a related embodiment, the method is continued using the new featurepattern as another mandrel pattern. In the continued method, withoutbreaking vacuum, a second thin film is conformally applied over the newfeature pattern using a second film-forming module hosted on the commonmanufacturing platform. The continued method further includes, withoutbreaking vacuum, removing the second thin film from upper surfaces ofthe new feature pattern and lower surfaces adjacent the new featurepattern using a third etching module hosted on the common manufacturingplatform to leave behind the second thin film on sidewalls of the newfeature pattern thereby forming second sidewall spacers, and withoutbreaking vacuum, removing the second mandrel pattern from the workpieceusing a fourth etching module hosted on the common manufacturingplatform, to leave behind the second sidewall spacers, the number ofsecond sidewall spacers being quadruple the number of mandrel lines.

In another embodiment in which a workpiece having a mandrel patternformed thereon comprising a number of mandrel lines is received into thecommon manufacturing platform, the integrated sequence of processingsteps further includes conformally applying a first thin film over themandrel pattern using a first film-forming module hosted on the commonmanufacturing platform and, without breaking vacuum, removing the firstthin film from upper surfaces of the mandrel pattern and lower surfacesadjacent the mandrel pattern using a first etching module hosted on thecommon manufacturing platform to leave behind the first thin film onsidewalls of the mandrel pattern thereby forming first sidewall spacers.Then, without breaking vacuum, a second thin film is conformally appliedover the first sidewall spacers and mandrel pattern in a secondfilm-forming module hosted on the common manufacturing platform, andagain without breaking vacuum, the second thin film is removed fromupper surfaces of the first sidewall spacers and mandrel pattern andlower surfaces adjacent the first sidewall spacers in a second etchingmodule hosted on the common manufacturing platform to leave behind thesecond thin film on sidewalls of the first sidewall spacers therebyforming second sidewall spacers. Then, without breaking vacuum, thefirst sidewall spacers are removed from the workpiece using a thirdetching module hosted on the common manufacturing platform to leavebehind the second sidewall spacers and mandrel pattern and to therebyform a new feature pattern comprising a number of features that istriple the number of mandrel lines. The one or more transfer modules areused to transfer the workpiece between the first film-forming module,the first etching module, the second film-forming module, the secondetching module, and the third etching module without breaking vacuum.

In one embodiment, the integrated sequence of processing steps includesreceiving a workpiece into the common manufacturing platform, theworkpiece having a mandrel pattern formed thereon comprising a number offeatures separated by a first pitch distance, and using the one or morefilm-forming modules and the one or more etching modules, forming asidewall spacer pattern based, at least in part, on the mandrel pattern,the sidewall spacer pattern comprising a plurality of second featuresseparated by a second pitch distance with the first pitch distance beinggreater than the second pitch distance. The integrated sequence ofprocessing steps further includes obtaining measurement data related tothe forming of the sidewall spacer pattern, the measurement data beingused to determine a thickness, width, or profile of the sidewall spacerpattern, and repairing the sidewall spacer pattern by (i) selectivelydepositing additional material onto a structure, (ii) conformallydepositing additional material onto a structure, (iii) reshaping astructure, (iv) etching a structure, (v) implanting dopant into astructure, (vi) removing and reapplying a material layer of a structure,or any combination of two or more thereof, when the thickness, width, orprofile of the sidewall spacer pattern does not meet a target thickness,width, or profile of the sidewall spacer pattern. The integratedsequence of processing steps is executed in a controlled environmentwithin the common manufacturing platform and without leaving thecontrolled environment, and the one or more transfer modules are used totransfer the workpiece between the plurality of processing modules whilemaintaining the workpiece within the controlled environment.

In a related embodiment, forming the sidewall spacer pattern includesconformally applying a thin film over the mandrel pattern in one of theone or more film-forming modules, removing the thin film from uppersurfaces of the mandrel pattern and lower surfaces adjacent the mandrelpattern in one of the one or more etching modules to leave behind thethin film on sidewalls of the mandrel pattern thereby forming sidewallspacers, and removing the mandrel pattern from the workpiece in one ofthe one or more etching modules to leave behind the sidewall spacers,wherein the sidewall spacers form the sidewall spacer pattern having amultiplicity of the number of features of the removed mandrel pattern.

In another related embodiment, forming the sidewall spacer patternincludes conformally applying a first thin film over the mandrel patternin one of the one or more film-forming modules, removing the first thinfilm from upper surfaces of the mandrel pattern and lower surfacesadjacent the mandrel pattern in one of the one or more etching modulesto leave behind the first thin film on sidewalls of the mandrel patternthereby forming first sidewall spacers, conformally applying a secondthin film over the first sidewall spacers and mandrel pattern in one ofthe one or more film-forming modules, removing the second thin film fromupper surfaces of the first sidewall spacers and mandrel pattern andlower surfaces adjacent the first sidewall spacers in one of the one ormore etching modules to leave behind the second thin film on sidewallsof the first sidewall spacers thereby forming second sidewall spacers,and removing the first sidewall spacers from the workpiece in one of theone or more etching modules to leave behind the second sidewall spacersand mandrel pattern to form a feature pattern having a multiplicity ofthe number of features of the removed mandrel pattern.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings, which are incorporated in and constitute apart of this specification, illustrate embodiments of the invention and,together with the general description of the invention given above, andthe detailed description given below, serve to describe the invention.

FIGS. 1A-1E are schematic cross-sectional diagrams illustrating oneembodiment of a self-aligned double patterning method.

FIGS. 2A-2D are schematic cross-sectional diagrams illustrating oneembodiment of a self-aligned quadruple patterning method.

FIG. 3 is a flow chart diagram illustrating one embodiment of anintegrated process flow for self-aligned multi-patterning.

FIG. 4 is a schematic diagram illustrating one embodiment of a commonmanufacturing platform for performing an integrated self-alignedmulti-patterning method.

FIG. 5 is a schematic diagram illustrating one embodiment of a commonmanufacturing platform for performing an integrated self-alignedmulti-patterning method.

FIGS. 6A-6G are schematic cross-sectional diagrams illustrating oneembodiment of a self-aligned triple patterning method.

FIG. 7 is a flow chart diagram illustrating one embodiment of anintegrated process flow for self-aligned multi-patterning.

FIG. 8 is a schematic diagram illustrating one embodiment of a commonmanufacturing platform for performing an integrated sequence ofprocessing steps.

FIG. 9A is a schematic diagram illustrating in top view anotherembodiment of a common manufacturing platform for performing anintegrated sequence of processing steps, and FIG. 9B is a side view inpartial cross-section of a measurement module incorporated in the commonmanufacturing platform of FIG. 9A.

FIG. 9C is a schematic diagram illustrating in top view anotherembodiment of a common manufacturing platform for performing anintegrated sequence of processing steps, and FIG. 9D is a side view inpartial cross-section of a measurement module incorporated in the commonmanufacturing platform of FIG. 9C.

DETAILED DESCRIPTION OF EMBODIMENTS OF THE INVENTION

Methods using an integrated platform for self-aligned multi-patterning(SAMP) are presented. However, one skilled in the relevant art willrecognize that the various embodiments may be practiced without one ormore of the specific details, or with other replacement and/oradditional methods, materials, or components. In other instances,well-known structures, materials, or operations are not shown ordescribed in detail to avoid obscuring aspects of various embodiments ofthe invention.

Similarly, for purposes of explanation, specific numbers, materials, andconfigurations are set forth in order to provide a thoroughunderstanding of the invention. Nevertheless, the invention may bepracticed without specific details. Furthermore, it is understood thatthe various embodiments shown in the figures are illustrativerepresentations and are not necessarily drawn to scale. In referencingthe figures, like numerals refer to like parts throughout.

Reference throughout this specification to “one embodiment” or “anembodiment” or variation thereof means that a particular feature,structure, material, or characteristic described in connection with theembodiment is included in at least one embodiment of the invention butdoes not denote that it is present in every embodiment. Thus, thephrases such as “in one embodiment” or “in an embodiment” that mayappear in various places throughout this specification are notnecessarily referring to the same embodiment of the invention.Furthermore, the particular features, structures, materials, orcharacteristics may be combined in any suitable manner in one or moreembodiments. Various additional layers and/or structures may be includedand/or described features may be omitted in other embodiments.

Additionally, it is to be understood that “a” or “an” may mean “one ormore” unless explicitly stated otherwise.

Various operations will be described as multiple discrete operations inturn, in a manner that is most helpful in understanding the invention.However, the order of description should not be construed as to implythat these operations are necessarily order dependent. In particular,these operations need not be performed in the order of presentation.Operations described may be performed in a different order than thedescribed embodiment. Various additional operations may be performedand/or described operations may be omitted in additional embodiments.

As used herein, the term “substrate” means and includes a base materialor construction upon which materials are formed. It will be appreciatedthat the substrate may include a single material, a plurality of layersof different materials, a layer or layers having regions of differentmaterials or different structures in them, etc. These materials mayinclude semiconductors, insulators, conductors, or combinations thereof.For example, the substrate may be a semiconductor substrate, a basesemiconductor layer on a supporting structure, a metal electrode or asemiconductor substrate having one or more layers, structures or regionsformed thereon. The substrate may be a conventional silicon substrate orother bulk substrate comprising a layer of semi-conductive material. Asused herein, the term “bulk substrate” means and includes not onlysilicon wafers, but also silicon-on-insulator (“SOI”) substrates, suchas silicon-on-sapphire (“SOS”) substrates and silicon-on-glass (“SOG”)substrates, epitaxial layers of silicon on a base semiconductorfoundation, and other semiconductor or optoelectronic materials, such assilicon-germanium, germanium, gallium arsenide, gallium nitride, andindium phosphide. The substrate may be doped or undoped.

As used herein the term “workpiece” means a composition of materials orlayers formed on a substrate during one or more phases of asemiconductor device manufacturing process, the workpiece ultimatelycomprising the semiconductor device at a final stage of processing.

The present embodiments include methods for SAMP that utilize a commonmanufacturing platform in which multiple processing steps are performedon the common platform within a controlled environment, for example,without breaking vacuum between operations. The integrated end-to-endplatform includes both etching modules and film-forming modules and isconfigured to transfer a workpiece from one module to another whilemaintaining the workpiece in a controlled environment, e.g., withoutbreaking vacuum or leaving an inert gas protective environment outsideof the common manufacturing platform, and thus avoiding exposure to anambient environment. Any SAMP process may be carried out on the commonmanufacturing platform, and the integrated end-to-end platform willenable high-volume manufacturing at reduced cost with improvement toyield, defectivity levels and EPE. As used herein, SAMP processesinclude any spacer patterning technique or sidewall image transfertechnique for reducing the pitch of features on the workpiece, which mayalso be referred to as increasing the pitch density. SAMP processesinclude, by way of example and not limitation, self-aligned double,triple, quadruple, octuple, etc. patterning, multicolor alternatingmaterials, self-blocking and cutting, multicolor patterned mask layers,etc. “Pitch” or “pitch distance” as used herein is the distance betweentwo identical points in two adjacent features of the pattern. A patternhaving an initial number of features separated by a first pitch distancemay be multiplied to increase the number of features and therebydecrease the pitch distance, or pitch. For example, in a quadruplepatterning process, the number of features, i.e., the pitch density, isquadrupled and the pitch or pitch distance is reduced by a factor of 4,i.e., ¼ the initial pitch. While this may be erroneously referred to aspitch multiplication, it is more accurately termed pitch reduction orpitch density multiplication

As used herein, a “film-forming module” refers to any type of processingtool for depositing or growing a film or layer on a workpiece in aprocess chamber. The film-forming module may be a single wafer tool, abatch processing tool, or a semi-batch processing tool. The types offilm deposition or growth that may be performed in the film-formingmodule include, by way of example and not limitation, chemical vapordeposition, plasma-enhanced or plasma-assisted chemical vapordeposition, atomic layer deposition, physical vapor deposition, thermaloxidation or nitridation, etc., and the process may be isotropic,anisotropic, conformal, selective, blanket, etc.

As used herein, an “etching module” refers to any type of processingtool for removing all or a portion of a film, layer, residue orcontaminant on a workpiece in a process chamber. The etching module maybe a single wafer tool, a batch processing tool, or a semi-batchprocessing tool. The types of etching that may be performed in theetching module include, by way of example and not limitation, chemicaloxide removal (COR), dry (plasma) etching, reactive ion etching, wetetching using immersion or non-immersion techniques, atomic layeretching, chemical-mechanical polishing, cleaning, ashing, lithography,etc., and the process may be isotropic, anisotropic, selective, etc.

As used herein, “module” generally refers to a processing tool with allof its hardware and software collectively, including the processchamber, substrate holder and movement mechanisms, gas supply anddistribution systems, pumping systems, electrical systems andcontrollers, etc. Such details of the modules are known in the art andtherefore not discussed herein.

In its broadest terms, embodiments of the disclosure relate to anintegrated sequence of processing steps performed on a workpiece andexecuted on a common manufacturing platform hosting a plurality ofprocessing modules including one or more film-forming modules, one ormore etching modules, and one or more transfer modules. The integratedsequence of processing steps includes receiving a workpiece into thecommon manufacturing platform, the workpiece having a mandrel patternformed thereon comprising a number of features, which may be referred toas mandrels or mandrel lines. The features are separated by an initialpitch distance. Using the one or more film-forming modules and the oneor more etching modules, a sidewall spacer pattern is formed based, atleast in part, on the mandrel pattern. The sidewall spacer pattern has amultiplicity of the number of features of the mandrel pattern, i.e., thepitch density is multiplied. For example, the sidewall spacer patternmay have 2 times, 3 times, 4 times, 6 times, 8 times, etc. the number offeatures or pitch density. The features of the sidewall spacer patternare separated by a second pitch distance with the first pitch distancebeing greater than the second pitch distance, i.e., the pitch isreduced. For example, the second pitch distance may be a half, a third,a fourth, a sixth, an eighth, etc. of the first pitch distance. Theintegrated sequence of processing steps is executed in a controlledenvironment within the common manufacturing platform and without leavingthe controlled environment, and the one or more transfer modules areused to transfer the workpiece between the plurality of processingmodules while maintaining the workpiece within the controlledenvironment. In the broadest implementation, the controlled environmentincludes any conditions the substrate 104 is exposed to without beingexposed to ambient air or conditions (e.g., temperature, humidity) whichare not controlled or monitored by the common manufacturing platform.Exposing the substrate 104 to ambient air, or other uncontrolledconditions, may be referred to as breaking vacuum. In a narrowerimplementation, the controlled environment may be limited to exposingthe substrate 104 to inert gases (e.g., N2, Ar), or any gas whichminimizes changes to the exposed substrate 104 surface, undersub-atmospheric conditions. For example, in some instances, theintegrated process sequences performed on the common manufacturingplatform may be conducted entirely at sub-atmospheric pressure,including treatment steps, metrology steps, and transfer steps. However,in other embodiments, the integrated process sequence can includeatmospheric process pressures, or higher pressures, to complete theentire integrated process within the common manufacturing platform. Inthis implementation, the controlled environment may include a broaderrange of pressure (e.g., sub-atmospheric, atmospheric or higher) withininert gas environments to limit or control changes to the substrate 104.In this way, if the integrated sequence includes atmospheric, or higher,and sub-atmospheric process conditions, the transition between differentpressures occurs within a controlled environment.

Reference is now made to the drawings, where like reference numeralsdesignate identical or corresponding parts throughout the several views.

FIGS. 1A-1D illustrate one embodiment of a self-aligned doublepatterning (SADP) method for a workpiece and FIGS. 2A-2D continue fromthe method of FIGS. 1A-1D to illustrate one embodiment of a self-alignedquadruple patterning (SAQP) method. FIG. 3 is a flow chart of a processflow 300 corresponding to the methods of FIGS. 1A-1D and 2A-2D. FIG. 4illustrates an embodiment of a common manufacturing platform of theinvention that may be used for performing process flow 300. The processflow 300 of FIG. 3 and the common manufacturing platform 400 of FIG. 4will be referenced throughout the following sequential discussion ofFIGS. 1A-1E and 2A-2D in which a workpiece 100 is described as itproceeds through an integrated sequence of processing steps.

In operation 302 of process flow 300 and as shown in FIG. 1A, workpiece100 having a first mandrel pattern 110 formed thereon is provided intothe common manufacturing platform 400. The workpiece 100 may include astack of various materials that have been subjected to a lithographicprocess in which a resist is coated onto a substrate and exposed to makethe first mandrel pattern 110. The resist pattern is then transferred tothe underlying layers through a succession of plasma steps. To thosefamiliar in the current art, different schemes are known for creating amandrel pattern on a substrate, which mandrels may be organic mandrelsor hard mandrels, including such materials as silicon, amorphous carbon,photoresist polymer, oxide, nitride, or the like. One such schemeinvolves deposition of an optical or organic planarizing layer (OPL),typically a spin-on material, then deposition of a siliconanti-reflective coating (SiARC), also spin-on, followed by resistcoating and lithographic processes. Another scheme involves depositionof an amorphous carbon layer using CVD deposition, then SiON filmdeposition using a CVD process, then bottom anti-reflective coating(BARC) deposition using a spin-on process, followed by a resist coatingand lithographic processes. For simplicity, workpiece 100 is depictedwith a substrate 104 having an underlying layer 106 thereon into which afinal pattern is to be transferred, and the first mandrel pattern 110 isformed on the underlying layer 106, although it may be understood thatthe structure on which the first mandrel pattern 110 is formed may be amulti-layer structure of which the underlying layer 106 is just one ofmultiple layers. In one embodiment the multi-layer structure may includea hard mask layer (not shown) that is patterned and etched to form amandrel pattern above the underlying layer 106. The hard mask layer isan alternative to the photoresist masking layer used for transferringthe first mandrel pattern 110 to the underlying layer 106. In certaininstances, the multi-layer structure (underlying layer 106) may requirea more aggressive etch process or multi-step etching processes, whichthe photoresist layer may not he able to withstand, to achieve thedesired profile or dimensions for the first mandrel pattern 110. Inanother embodiment (not shown), the first mandrel pattern 110 may beformed via an etching process performed on the common manufacturingplatform 400 subsequent to the operation 302 using any of the patterningtechniques disclosed herein.

As shown in FIG. 4, a transfer module 410 a may be used to bring theworkpiece into the controlled environment of the common manufacturingplatform 400, which controlled environment is maintained throughout theprocess flow 300. The controlled environment may include a vacuumenvironment, where each operation in the process flow 300 is conductedwithout breaking vacuum, or an inert gas atmosphere being less thanatmospheric pressure, or a combination thereof. A single transfer modulemay be coupled between each processing module or tool, or separatetransfer modules 410 a-h may be used for each tool transfer, as depictedin FIG. 4. Transfer modules 410 a-h may be collectively referred toherein as transfer modules 410 where appropriate. Where differentprocessing modules on the common manufacturing platform 400 requiredifferent controlled environments, such as different vacuum pressures orvacuum in one module followed by a module with inert gas atmosphere,multiple transfer modules 410 may be used where the transfer modules 410assist in implementing the transitions between the different controlledenvironments. While a single transfer module may be useful in acluster-type tool where same-type processing modules are positioned in acircle around the transfer module, multiple transfer modules 410 may bemore appropriate in an end-to-end platform configuration with differentprocessing module types such as that depicted in FIG. 4. However, theembodiments herein do not preclude an end-to-end platform configurationthat utilizes a single transfer module that is coupled to each of theprocessing modules, or some configuration in between, for example, acommon transfer module for adjacent same-type processing modules thatare used in sequence.

As is well known in high volume manufacturing, a front-end module 402 amay be used to load a cassette of workpieces (not shown), sequentiallyline up the workpieces and insert them into a load lock, then into atransfer module 410 a in a controlled environment, and the transfermodule 410 a sequentially loads the workpieces into a processing module.In the common manufacturing platform 400 of an embodiment of theinvention, in operation 302, the workpiece 100, which has been receivedinto the controlled environment, is loaded by the transfer module 410 ainto a film-forming module 420 hosted on the common manufacturingplatform 400.

Referring to FIGS. 1B and 3, in operation 304, in the film-formingmodule 420, a first thin film 120 is conformally deposited over thefirst mandrel pattern 110 and underlying layer 106. The first thin film120 can comprise an oxide, a nitride, silicon, or any combinationthereof, for example, silicon nitride, silicon oxide, or siliconoxynitride. As shown, the common manufacturing platform 400 may includetwo identical film-forming modules 420 on opposing sides of the transfermodule 410 a. By mirroring the two sides of the platform 400, end-to-endprocessing can be achieved for two workpieces concurrently, and if onefilm-forming module 420 goes out of service temporarily, the platform400 can continue to operate, at least at 50% capacity.

Then, without leaving the controlled environment, e.g., without breakingvacuum, transfer modules 410 a and 410 b are used to transfer theworkpiece 100 to an etching module 430 such as first etching module 430a also hosted on the common manufacturing platform 400, e.g., transfermodule 410 a removes the workpiece 100 from film-forming module 420 andtransfers it to transfer module 410 b, which then delivers the workpieceinto first etching module 430 a. Adjustments to the controlledenvironment may be made in transfer modules 410 a and 410 b if firstetching module 430 a operates with different parameters thanfilm-forming module 420, such as different vacuum pressures. Referringto FIGS. 1C and 3, in operation 306, the first thin film 120 is etchedin first etching module 430 a to leave behind the first thin film 120 onsidewalls of the first mandrel pattern 110, which remaining thin film120 forms first sidewall spacers 122. For example, operation 306 may bea first spacer reactive ion etch (RIE) process that creates the firstsidewall spacers 122 by removing the first thin film 120 from uppersurfaces of the first mandrel pattern 110 and from lower surfacesadjacent to the first mandrel pattern 110, e.g., from the underlyinglayer 106. Again, the common manufacturing platform 400 may include twoidentical first etching modules 430 a on opposing sides of the transfermodule 410 b.

Thereafter, and again without leaving the controlled environment, e.g.,without breaking vacuum, in operation 308, with reference to FIGS. 1Dand 3, a first mandrel pull process is performed, the first mandrel pullprocess removing the first mandrel pattern 110 leaving behind theremaining thin film 120 that formed the first sidewall spacers 122. Thefirst mandrel pull process may be performed in the same etching module430 used in operation 306 or in another etching module 430 such assecond etching module 430 b hosted on the common manufacturing platform400. In the event a second etching module 430 b is used, a transfermodule 410 is used to transfer the workpiece from the first etchingmodule 430 a to the second etching module 430 b without leaving thecontrolled environment. As shown, two transfer modules 410 b, 410 c maybe used to make the transfer, the transfer module 410 b removing theworkpiece from the first etching module 430 a, and transferring it tothe transfer module 410 c, which then delivers the workpiece into secondetching module 430 b. Adjustments to the controlled environment may bemade in transfer modules 410 b and 410 c if second etching module 430 boperates with different parameters than first etching module 430 a, suchas different vacuum pressures. Again, the common manufacturing platform400 may include two identical second etching modules 430 b on opposingsides of the transfer module 410 c. With the first mandrel pattern 110removed, the first sidewall spacers 122 that remain form a new featurepattern with double the number of features compared to the number offeatures or mandrels in the first mandrel pattern 110, and with half thepitch of the first mandrel pattern 110.

Optionally, the workpiece may be subjected to one or more cleaningprocesses before further patterning operations. For example, cleaningmay be performed in the same etching module 430 used in operation 308 orin another etching module 430 such as third etching module 430 c hostedon the common manufacturing platform 400. In the event a third etchingmodule 430 c is used, a transfer module 410 is used to transfer theworkpiece from the second etching module 430 b to the third etchingmodule 430 c without leaving the controlled environment, e.g., withoutbreaking vacuum. As shown, two transfer modules 410 c, 410 d may be usedto make the transfer, the transfer module 410 c removing the workpiecefrom the second etching module 430 b, and transferring it to thetransfer module 410 d, which then delivers the workpiece into the thirdetching module 430 c. Adjustments to the controlled environment may bemade in transfer modules 410 c and 410 d if the third etching module 430c operates with different parameters than the second etching module 430b, such as different vacuum pressures. Again, the common manufacturingplatform 400 may include two identical third etching modules 430 c onopposing sides of the transfer module 410 d. In one embodiment, asillustrated in FIG. 4, third etching module 430 c is a COR tool forperforming a chemical oxide removal.

The first sidewall spacers 122, which form the new feature pattern, maybe used in an operation 318 as shown by arrow 310 in FIG. 3 to transferthe new feature pattern into the underlying layer 106, to form thedoubled pattern 108 in FIG. 1E. The doubled pattern 108 in FIG. 1E maybe used as a second mandrel pattern 222 for quadrupling the firstmandrel pattern 110, as described in operations 312-318 below withreferences to FIGS. 2A-2D and 3. Alternatively, the first sidewallspacers 122 that form the new feature pattern in FIG. 1D may be used asa second mandrel pattern 222 for quadrupling the first mandrel pattern110, as described in operations 312-318 below with reference to FIGS.2A-2D and 3.

Referring to FIGS. 2A and 3, in operation 312, and again without leavingthe controlled environment, e.g., without breaking vacuum, a second thinfilm 230 is conformally deposited over the second mandrel pattern 222and underlying layer 106. The second thin film 230 can comprise anoxide, a nitride, or silicon, for example, titanium oxide. Thedeposition may be performed in the same film-forming module 420 used inoperation 304 or in a different film-forming module 422 hosted on thecommon manufacturing platform 400. A transfer module 410 is used totransfer the workpiece 100 from the third etching module 430 c (or fromthe second etching module 430 b if there is no third etching module 430c) to the film-forming module 422 without breaking vacuum. As shown, twotransfer modules 410 d, 410 e may be used to make the transfer, thetransfer module 410 d removing the workpiece 100 from the third etchingmodule 430 c, and transferring it to the transfer module 410 e, whichthen delivers the workpiece 100 into film-forming module 422.Additionally, as shown, where there is a change in the number ofworkpieces 100 to be processed by a module, a batch/de-batch module 424and an eject/realign module 426 may be inserted in the process flow onthe common manufacturing platform 400. In one embodiment, film-formingmodule 422 is a semi-batch deposition tool, for example a 6-wafer tool,while the etching modules 430 a-f are single wafer tools. Transfermodule 410 then transfers workpieces 100 sequentially into thebatch/de-batch module 424 for batch positioning, and the semi-batch(e.g., 6 workpieces) is then transferred by transfer module 410 e intothe film-forming module 422. After the semi-batch is processed, transfermodule 410 e transfers the workpieces 100 into the eject/realign module426 to realign the workpieces 100 and transfer them sequentially to thenext single wafer tool, for example, via transfer module 410 fAdjustments to the controlled environment may be made in transfermodules 410 d and 410 e as well as batch/de-batch module 424 iffilm-forming module 422 operates with different parameters than thirdetching module 430 c, such as different vacuum pressures. Again, thecommon manufacturing platform 400 may include two identical film-formingmodules 422 on opposing sides of the transfer module 410 e.

Then, without leaving the controlled environment, e.g., without breakingvacuum, transfer module 410 f is used to transfer the workpiece 100 toan etching module 430 also hosted on the common manufacturing platform400, which may be the same etching module 430 used in operation 306, oranother etching module 430 such as fourth etching module 430 d.Adjustments to the controlled environment may be made in transfermodules 410 e and 410 f as well as eject/realign module 426 if fourthetching module 430 d operates with different parameters thanfilm-forming module 422, such as different vacuum pressures. Inoperation 314, the second thin film 230 is etched to leave behind thesecond thin film 230 on sidewalls of the second mandrel pattern 222,which remaining second thin film 230 forms second sidewall spacers 232,as shown in FIG. 2B. For example, operation 314 may be a second spacerreactive ion etch (RIE) process that creates the second sidewall spacers232 by removing the second thin film 230 from upper surfaces of thesecond mandrel pattern 222 and from lower surfaces adjacent to thesecond mandrel pattern 222, e.g., from the underlying layer 106.

Thereafter, and again without leaving the controlled environment, e.g.,without breaking vacuum, in operation 316, a second mandrel pull processis performed, the second mandrel pull process removing the secondmandrel pattern 222 leaving behind the remaining thin film 230 thatformed the second sidewall spacer pattern 232, as shown in FIG. 2C. Thesecond mandrel pull process may be performed in the same etching module430 used in operation 308, or in another etching module such as fifthetching module 430 e hosted on the common manufacturing platform 400. Inthe event a fifth etching module 430 e is used, a transfer module 410 isused to transfer the workpiece 100 from the fourth etching module 430 dto fifth etching module 430 e without leaving the controlledenvironment. As shown, two transfer modules 410 f, 410 g may be used tomake the transfer, the transfer module 410 f removing the workpiece fromthe fourth etching module 430 d, and transferring it to the transfermodule 410 g, which then delivers the workpiece 100 into fifth etchingmodule 430 e. Adjustments to the controlled environment may be made intransfer modules 410 f and 410 g if fifth etching module 430 e operateswith different parameters than fourth etching module 430 d, such asdifferent vacuum pressures. Again, the common manufacturing platform 400may include two identical fifth etching modules 430 e on opposing sidesof the transfer module 410 g. With the second mandrel pattern 222removed, the second sidewall spacers 232 that remain form another newfeature pattern with quadruple the number of features compared to thenumber of features or mandrels in the first mandrel pattern 110, andwith a quarter of the pitch of the first mandrel pattern 110.

The second sidewall spacers 232 may be used in an operation 318 totransfer the new feature pattern into the underlying layer 106 to formthe quadrupled pattern 236, as shown in FIG. 2D. The quadrupled sidewallspacers 232 in FIG. 2C or the quadrupled pattern 236 in FIG. 2D may beused as a third mandrel pattern 222 for octupling the first mandrelpattern 110, as described in operations 312-318 above with references toFIGS. 2A-2D and 3. Operation 318, whether performed after operation 308or after operation 316, may be performed in an etching module 430 on thecommon manufacturing platform 400 without leaving the controlledenvironment, or may be performed after leaving the common manufacturingplatform 400. If performed on the common manufacturing platform 400, anyetching module 430 may be used, including etching modules 430 a-f or adifferent etching module (not shown). Upon completion of process flow300, or that portion of process flow 300 that is to be performed in thecommon manufacturing platform 400, the workpiece 100 exits the commonmanufacturing platform 400 via another front-end module 402 b, which maybe identical to front-end module 402 a, although located at the back endof the end-to-end arrangement of modules on common manufacturingplatform 400. In the generally reverse process of front-end module 402a, the workpieces 100 are sequentially transferred by transfer module410 h to a load lock where the controlled environment is removed andthen into a cassette (not shown) on the front-end module 402 b. Thecommon manufacturing platform 400 arranged in a substantially mirroredfashion has the advantage of providing redundancy in the event a modulehas to go out of service, where the common manufacturing platform 400could still operate at a reduced capacity.

In one embodiment, and as will be discussed in more detail below, thecommon manufacturing platform 400 advantageously includes an “activeinterdiction system.” The active interdiction system includes aworkpiece measurement region within a transfer module 410 hosted on thecommon manufacturing platform 400 or an integrated metrology module (notshown) hosted on the common manufacturing platform 400. The workpiecemeasurement region may be located in a dedicated area of the transfermodule 410, as described in more detail below. The workpiece measurementregion or metrology module may include an inspection system forgathering measurement data. As described in more detail below, theinspection system may include at least one optical source for directingan optical beam incident on a measurement surface of the workpiece andat least one detector arranged to receive an optical signal scatteredfrom the measurement surface of the workpiece. The active interdictionsystem may further include an intelligence system hosted on the commonmanufacturing platform 400 that is configured to gather data from theworkpiece measurement region or metrology module and control theintegrated sequence of processing steps executed on the commonmanufacturing platform 400, such as process flow 300.

For active interdiction in accordance with embodiments of the invention,the workpiece measurement region or metrology module collects real timedata “on the fly” pertaining to attributes of features or layers on thesemiconductor workpiece (e.g., film or feature thickness, feature depth,surface roughness, pattern shift, voids or other defects, loss ofselectivity, lateral overgrowth, uniformity, etc.) and uses such realtime data to concurrently control integration operating variables in theintegrated processing modules hosted on the common manufacturingplatform 400. The data can be used in a feed-back and/or feed-forwardmanner to control operations performed on the workpiece in subsequentmodules and/or to control operations performed in prior modules on asubsequent workpiece, for example as will be explained below withreference to operations 350-362 of FIG. 3. In an embodiment, the commonmanufacturing platform 400 includes a correction module, which may be afilm-forming module 420 or 422, an etching module 430, or other type oftreatment module as appropriate for applying corrective action orremedial treatment to the workpiece 100.

Unlike traditional metrology or process control, the workpiece does notleave the controlled environment to enter a stand-alone metrology toolthereby minimizing oxidation and defect generation, the measurements arenon-destructive such that no workpiece is sacrificed to obtain datathereby maximizing production output, and the data can be collected inreal time as part of the process flow to avoid negatively impactingproduction time and to enable in-process adjustments to the workpiece orto subsequent workpieces being sequentially processed on the commonmanufacturing platform 400. Additionally, the measurements are notperformed in the film-forming or etching modules, thereby avoidingissues when measurement devices are exposed to process fluids. Forexample, by incorporating workpiece measurement regions into thetransfer module, the data can be obtained as the workpiece is travelingbetween processing tools with little to no delay in the process flow,without exposure to process fluids, and without leaving the controlledenvironment, e.g., without breaking vacuum. While the “on the fly” datamay not be as accurate as the data obtained from traditional destructivemethods performed in stand-alone metrology tools, the nearlyinstantaneous feedback on the process flow and ability to make real-timeadjustment without interrupting the process flow or sacrificing yield ishighly beneficial for high-volume manufacturing.

With further reference to the process flow 300 of FIG. 3, the method mayinclude inspecting the workpiece, such as performing metrology, i.e.,obtaining measurement data, using the active interdiction system at anyof various times throughout the integrated method, without leaving thecontrolled environment, e.g., without breaking vacuum. Inspection of theworkpiece may include characterizing one or more attributes of theworkpiece and determining whether the attribute meets a targetcondition. For example, the inspection may include obtaining measurementdata related to an attribute and determining whether a defectivity, afilm conformality, a thickness, a uniformity, and/or a selectivitycondition meets a target for that condition. While the followingdiscussion will focus on obtaining measurement data, it may beunderstood that other inspection techniques performed within thecontrolled environment of the common manufacturing platform are alsowithin the scope of the invention.

The active interdiction system may include a single metrology module orworkpiece measurement region on the common manufacturing platform 400 ormay include multiple metrology modules or workpiece measurement regionson the common manufacturing platform 400, as will be discussed in moredetail below. Each metrology operation is optional, as indicated by thephantom lines in FIG. 3, but may be advantageously performed at one ormore points in the process flow to ensure the workpiece 100 is withinspecification to reduce defectivity and EPE. In one embodiment,measurement data is obtained after each step of the integrated sequenceof processing steps conducted on the common manufacturing platform. Themeasurement data may be used to repair the workpiece in a correctionmodule prior to leaving the common manufacturing platform, and/or may beused to alter parameters of the integrated sequence of processing stepsfor subsequent workpieces.

In broad terms, within the controlled environment, measurement data maybe obtained during the integrated sequence of processing steps relatedto the formation of the sidewall spacer pattern and, based on themeasurement data, a determination may be made whether a thickness,width, or profile of the sidewall spacer pattern meets a targetcondition. When the thickness, width, or profile of the sidewall spacerpattern is determined to not meet the target condition, the workpiecemay be processed in a correction module on the common manufacturingplatform to alter the sidewall spacer pattern. In one embodiment, whenthe target thickness, width, or profile of the sidewall spacer patternis not met, the sidewall spacer pattern may be repaired by (i)selectively depositing additional material onto a structure, (ii)conformally depositing additional material onto a structure, (iii)reshaping a structure, (iv) etching a structure, (v) implanting dopantinto a structure, (vi) removing and reapplying a material layer of astructure, or any combination of two or more thereof.

In an embodiment, when a conformality or uniformity of a thin filmapplied in a film-forming module on the common manufacturing platformdoes not meet a target conformality or target uniformity for the thinfilm, corrective action may be taken to repair the thin film. Repairinga conformally applied thin film may be accomplished by removing the thinfilm and reapplying the thin film, conformally applying an additionalthin film, etching the thin film, or a combination of two or morethereof. For example, the workpiece may be transferred to a correctionetching module to remove the thin film or partially etch the thin film,and/or the workpiece may be transferred to a correction film-formingmodule to reapply the thin film after it is removed or to applyadditional thin film over the existing thin film or partially etchedthin film.

In an embodiment, when the thickness, width, or profile of the sidewallspacers formed in an etching module on the common manufacturing platformdoes not meet a target thickness, width, or profile of the sidewallspacers, corrective action may be taken to repair the sidewall spacers.Repairing sidewall spacers may be accomplished by selectively depositingadditional material onto the sidewall spacers, reshaping the sidewallspacers, implanting dopant into the sidewall spacers, or a combinationof two or more thereof. For example, the workpiece may be transferred toa correction film-forming module to selectively deposit spacer materialor to one or more correction film-forming and/or etching modules toperform a sidewall spacer reshaping process.

The correction modules may be different film-forming and etching modulesthat are designated as correction modules on the common manufacturingplatform or another type of treatment module integrated on the commonmanufacturing platform, such as a thermal annealing module, or may bethe same film-forming and etching modules used to conformally apply thethin film, etch the thin film, and remove the mandrel pattern.

The process flow 300 of FIG. 3 will now be described in detail with theoptional metrology operations. Operation 302 includes receiving aworkpiece having a first mandrel pattern into a common manufacturingplatform. Operation 350 includes optionally performing metrology toobtain measurement data related to attributes of the incoming workpiece,such as attributes of the first mandrel pattern and/or an underlyinglayer over which the mandrel pattern is formed and into which the finalpattern is to be transferred, which measurement data may be used toadjust and/or control process parameters of any one of operations304-318.

Operation 304 includes conformally applying a first thin film over thefirst mandrel pattern using a film-forming module hosted on the commonmanufacturing platform. Operation 352 includes optionally performingmetrology to obtain measurement data related to attributes of theworkpiece having the conformal first thin film applied, such asattributes of the first thin film, the first mandrel pattern as affectedby the thin film deposition, and/or the underlying layer into which thefinal pattern is to be transferred as affected by the thin filmdeposition, which measurement data may be used to adjust and/or controlprocess parameters of any one of operations 306-318, may be used to makeadjustments for subsequent workpieces to the incoming attributes of theworkpieces in operation 302 or to operation 304, or may be used torepair the workpiece before continued processing. In one embodiment,when the measurement data indicates that one or more attributes do notmeet a target condition, the workpiece may be transferred to acorrection module to repair the conformally applied first thin film. Forexample, when a conformality or uniformity of the first thin film doesnot meet a target conformality or target uniformity for the first thinfilm, corrective action may be taken in one or more correction modules,such as removing the thin film and reapplying the thin film, conformallyapplying an additional thin film, etching the thin film, or acombination of two or more thereof.

Operation 306 includes removing the first thin film from upper surfacesof the first mandrel pattern and lower surfaces adjacent the firstmandrel pattern (e.g., from the underlying layer) using an etchingmodule hosted on the common manufacturing platform to form firstsidewall spacers (referred to as a spacer etch). Operation 354 includesoptionally performing metrology to obtain measurement data related toattributes of the workpiece having the etched first thin film formingfirst sidewall spacers on the sidewalls of the first mandrel pattern,such as attributes of the first sidewall spacers, the first mandrelpattern as affected by the spacer etch, and/or the underlying layer asaffected by the spacer etch, which measurement data may be used toadjust and/or control process parameters of any one of operations308-318, may be used to make adjustments for subsequent workpieces tothe incoming attributes of the workpieces in operation 302 or tooperations 304-306, or may be used to repair the workpiece beforecontinued processing. In one embodiment, when the measurement dataindicates that one or more attributes do not meet a target condition,the workpiece may be transferred to a correction module to repair thefirst sidewall spacers on the sidewalls of the mandrel pattern. Forexample, when the thickness, width, or profile of the sidewall spacersdoes not meet a target thickness, width, or profile of the sidewallspacers, corrective action may be taken in one or more correctionmodules, such as by selectively depositing additional material onto thesidewall spacers, reshaping the sidewall spacers, implanting dopant intothe sidewall spacers, or a combination of two or more thereof.

Operation 308 includes removing the first mandrel pattern (referred toas a mandrel pull) using an etching module hosted on the commonmanufacturing platform to leave behind the first sidewall spacers.Operation 356 includes optionally performing metrology to obtainmeasurement data related to attributes of the workpiece having the firstsidewall spacers, such as attributes of the first sidewall spacers asaffected by the mandrel pull and/or the underlying layer as affected bythe mandrel pull, which measurement data may be used to adjust and/orcontrol process parameters of any one of operations 310-318, may be usedto make adjustments for subsequent workpieces to the incoming attributesof the workpieces in operation 302 or to operations 304-308, or may beused to repair the workpiece before continued processing. In oneembodiment, when the measurement data indicates that one or moreattributes do not meet a target condition, the workpiece may betransferred to a correction module to repair the first sidewall spacers.For example, when the thickness, width, or profile of the sidewallspacers does not meet a target thickness, width, or profile of thesidewall spacers, corrective action may be taken in one or morecorrection modules, such as by selectively depositing additionalmaterial onto the sidewall spacers, reshaping the sidewall spacers,implanting dopant into the sidewall spacers, or a combination of two ormore thereof.

In a SADP embodiment, process flow 300 may proceed to operation 318,discussed below, via SADP flow 310, either without or after operation356.

Operation 312 includes conformally applying a second thin film over thefirst sidewall spacers that serve as a second mandrel pattern, using afilm-forming module hosted on the common manufacturing platform.Operation 358 includes optionally performing metrology to obtainmeasurement data related to attributes of the workpiece having theconformal second thin film applied, such as attributes of the secondthin film, the second mandrel pattern as affected by the thin filmdeposition, and/or the underlying layer as affected by the thin filmdeposition, which measurement data may be used to adjust and/or controlprocess parameters of any one of operations 314-318, may be used to makeadjustments for subsequent workpieces to the incoming attributes of theworkpieces in operation 302 or to operations 304-308, or may be used torepair the workpiece before continued processing. In one embodiment,when the measurement data indicates that one or more attributes do notmeet a target condition, the workpiece may be transferred to acorrection module to repair the conformally applied second thin film.For example, when a conformality or uniformity of the second thin filmdoes not meet a target conformality or target uniformity for the secondthin film, corrective action may be taken in one or more correctionmodules, such as removing the thin film and reapplying the thin film,conformally applying an additional thin film, etching the thin film, ora combination of two or more thereof.

Operation 314 includes removing the second thin film from upper surfacesof the second mandrel pattern and lower surfaces adjacent the secondmandrel pattern (e.g., from the underlying layer) using an etchingmodule hosted on the common manufacturing platform to form secondsidewall spacers (referred to as a spacer etch). Operation 360 includesoptionally performing metrology to obtain measurement data related toattributes of the workpiece having the etched second thin film formingsecond sidewall spacers on the sidewalls of the second mandrel pattern,such as attributes of the second sidewall spacers, the second mandrelpattern as affected by the spacer etch, and/or the underlying layer asaffected by the spacer etch, which measurement data may be used toadjust and/or control process parameters of any one of operations316-318, may be used to make adjustments for subsequent workpieces tothe incoming attributes of the workpieces in operation 302 or tooperations 304-314, or may be used to repair the workpiece beforecontinued processing. In one embodiment, when the measurement dataindicates that one or more attributes do not meet a target condition,the workpiece may be transferred to a correction module to repair thesecond sidewall spacers on the sidewalls of the second mandrel pattern.For example, when the thickness, width, or profile of the sidewallspacers does not meet a target thickness, width, or profile of thesidewall spacers, corrective action may be taken in one or morecorrection modules, such as by selectively depositing additionalmaterial onto the sidewall spacers, reshaping the sidewall spacers,implanting dopant into the sidewall spacers, or a combination of two ormore thereof.

Operation 316 includes removing the second mandrel pattern (referred toas a mandrel pull) using an etching module hosted on the commonmanufacturing platform, to leave behind the second sidewall spacers.Operation 362 includes optionally performing metrology to obtainmeasurement data related to attributes of the workpiece having thesecond sidewall spacers, such as attributes of the second sidewallspacers as affected by the mandrel pull and/or the underlying layer asaffected by the mandrel pull, which measurement data may be used toadjust and/or control process parameters of operation 318, may be usedto make adjustments for subsequent workpieces to the incoming attributesof the workpieces in operation 302 or to operations 304-316, or may beused to repair the workpiece before continued processing. In oneembodiment, when the measurement data indicates that one or moreattributes do not meet a target condition, the workpiece may betransferred to a correction module to repair the second sidewallspacers. For example, when the thickness, width, or profile of thesidewall spacers does not meet a target thickness, width, or profile ofthe sidewall spacers, corrective action may be taken in one or morecorrection modules, such as by selectively depositing additionalmaterial onto the sidewall spacers, reshaping the sidewall spacers,implanting dopant into the sidewall spacers, or a combination of two ormore thereof.

Process parameters, as referred to above, may include any operatingvariable within a processing module, such as but not limited to: gasflow rates; compositions of etchants, deposition reactants, purge gases,etc.; chamber pressure; temperature; electrode spacing; power; etc. Theintelligence system of the active interdiction system is configured togather measurement data from the inspection system and control theintegrated sequence of processing steps executed on the commonmanufacturing platform, for example, by making in situ adjustments toprocessing parameters in subsequent processing modules for the workpiecein process, or by changing process parameters in one or more processingmodules for subsequent workpieces. Thus, the obtained measurement datamay be used to identify a needed repair to the workpiece during theintegrated sequence of processing steps to avoid having to scrap theworkpiece, and/or to adjust processing parameters for the integratedsequence of processing steps for steps performed on the same workpieceafter the measurement data is obtained or for processing subsequentworkpieces to reduce occurrences of the target conditions not being metfor the subsequent workpieces.

Referring now to FIG. 5, another embodiment of a common manufacturingplatform 500 is provided for executing a SAMP process, such as thosedescribed above in FIGS. 1A-1E, 2A-2D and 3, where like referencenumerals are used to refer to like parts. Similar to FIG. 4 describedabove, common manufacturing platform 500 includes front-end modules 402a and 402 b at each end of the common manufacturing platform 500 fortransferring workpieces 100 into and out of the common manufacturingplatform 500. Common manufacturing platform 500 includes a plurality oftransfer modules 410 for transferring workpieces into and out of aplurality of processing modules hosted on the common manufacturingplatform 500. The plurality of processing modules includes one or morefilm-forming modules 420, such as one or more deposition tools, and oneor more etching modules 430, such as one or more dry etching tools, wetetching tools and/or COR tools. As shown, two film-forming modules 420may be included, each coupled to one of the transfer modules 410, andwhich may be the same or different type of tool. As further shown,multiple etching modules 430 may be included, with two etching modules430 coupled to each of several transfer modules 410. Six etching modules430 are shown, although a fewer or greater number of etching modules 430may be included. The film-forming modules 420 may be used to performoperations 304 and 312. The etching modules 430 may be used to performoperations 306, 308, 314, and 316, and optionally operation 318 andother cleaning or etching operations. Any of the processing modules mayserve as a correction module for repairing the workpiece, or additionalprocessing modules may be added for performing corrective action. Theplurality of processing modules generally forms two lines 440, 450 fromfront end to back end, one line 440 down one side of a row of transfermodules 410 and the other line 450 down the other side of the row oftransfer modules 410.

In one example, a single workpiece 100 is processed down line 440 fromfront end to back end, then transferred back to the front end andprocessed again down line 450. Thus, the conformal deposition operation304, spacer etch operation 306, and mandrel pull operation 308 areperformed down line 440 to double the pattern, then the conformaldeposition operation 312, spacer etch operation 314, and mandrel pulloperation 316 are performed down line 450 to quadruple the pattern,thereby repeating the operations in two passes down the end-to-endcommon manufacturing platform 500. A wet etch or repair process can beperformed at the end of line 440 (in the third etching module 430 shownin sequence or in a film-forming module or other treatment module, notshown) before transferring the workpiece 100 back to the front end inorder to clean or repair the second mandrel pattern before repeating theoperations in line 450. A COR process or a repair process can beperformed at the end of line 450 (in the third etching module 430 shownin sequence or in a film-forming module or other treatment module, notshown) to remove oxide from the quadrupled pattern or repair the patternbefore exiting the common manufacturing platform 500. Alternatively, inthe third etching module 430 shown in line 450, operation 318 may beperformed in a suitable type of etching module. In this example, theadditional etching modules at the back-end of the lines 440, 450 may bedifferent from each other, since each of these etching modules 430 willbe processing workpieces sequentially at only one stage of theintegrated process flow 300.

In another example, the two lines 440, 450 operate independently toprocess two workpieces 100 concurrently, either temporally in-phase ortemporally off-set, each progressing down one of the lines 440 or 450from front end to back end, then transferred back to the front end andeach processed again down the same line 440 or 450. Thus, the conformaldeposition operation 304, spacer etch operation 306, and mandrel pulloperation 308 are performed down each line 440 and 450 to double thepattern on the two workpieces 100, then the conformal depositionoperation 312, spacer etch operation 314, and mandrel pull operation 316are performed down the lines 440 and 450 to quadruple the pattern on thetwo workpieces 100, thereby repeating the operations in two passes downthe end-to-end common manufacturing platform 500. A cleaning etch orrepair process can be performed at the end of the first pass (in thethird etching modules 430 shown in sequence or in a film-forming moduleor other treatment module, not shown) before transferring the workpieces100 back to the front end in order to clean or repair the second mandrelpattern before repeating the operations. A cleaning etch, repairprocess, or a pattern transfer etch (operation 318) can be performed atthe end of the second pass (in the third etching module 430 shown insequence or in a film-forming module or other treatment module, notshown) before exiting the common manufacturing platform 500. In thisexample, the third etching modules 430 (or other type of correctionmodule) would be the same type of module, since they are each processingworkpieces at more than one stage of the integrated process flow 300.This example has the advantage of providing redundancy in the event amodule has to go out of service, where the common manufacturing platform500 can still operate at 50% capacity.

In one embodiment, the common manufacturing platform includes at leastone deposition module for conformally depositing a thin film over amandrel pattern, at least one etching module for performing a spaceretch and a mandrel pull, and at least one transfer module fortransferring the workpiece between modules while maintaining acontrolled environment throughout the integrated process flow.Advantageously, the at least one etching module includes at least twoetching modules, one for the spacer etch and one for the mandrel pull.In a further embodiment, the common manufacturing platform includes atleast one workpiece measurement region, which is located within adedicated area of the at least one transfer module or within a metrologymodule hosted on the common manufacturing platform within the controlledenvironment, for obtaining measurement data related to one or moreattributes of the workpiece. In one embodiment, the common manufacturingplatform includes at least one correction module for performing a repairof the workpiece, such as repairing the conformally deposited thin filmor the sidewall spacers.

As may be appreciated by persons having ordinary skill in the art, thenumber and positioning of processing modules on the common manufacturingplatform as well as metrology operations may be selected based on theprocessing time in the different modules needed to carry out theoperations in the different modules to provide essentially continuousprocess flow through the common manufacturing platform and thus goodthroughput matching.

In one embodiment, the plurality of processing modules on the commonmanufacturing platform and the integrated process flow are adapted foruse in a multi-color SAMP process, where self-aligned blocks (SAB) ofdifferent colors (i.e., different materials each having different etchselectivity such that each color represents a different etch rate) areused to enable precise line cuts. In certain embodiments, the integratedprocess flow for forming a sidewall spacer pattern may include anysequence of process steps as described in embodiments of U.S. Pat. Nos.9,818,611 or 10,020,196, each entitled “Methods of Forming Etch Masksfor Sub-Resolution Substrate Patterning,” which sequence of processsteps are executed in the common manufacturing platform without leavingthe controlled environment. Further, while double and quadruplepatterning are discussed in detail above, the plurality of processingmodules on the common manufacturing platform and the integrated processflow may be adapted for use in any multi-patterning process.

FIGS. 6A-6G illustrate one embodiment of a self-aligned triplepatterning (SATP) method for a workpiece, and FIG. 7 is a flow chart ofa process flow 700 corresponding to the method of FIGS. 6A-6G. FIGS. 4and 5, as discussed above, illustrate embodiments of a commonmanufacturing platform of the invention that may be used for performingprocess flow 700.

In operation 702 of process flow 700 and as shown in FIG. 6A, workpiece600 having a first mandrel pattern 610 formed thereon is provided intothe common manufacturing platform 400 or 500. The workpiece 600 may beas described above for workpiece 100. Similarly, for simplicity,workpiece 600 is depicted with a substrate 604 having an underlyinglayer 606 thereon into which a final pattern is to be transferred, andthe mandrel pattern 610 is formed on the underlying layer 606, althoughit may be understood that the structure on which the mandrel pattern 610is formed may be a multi-layer structure of which the underlying layer606 is just one of multiple layers.

As shown in FIGS. 4 and 5, the transfer module 410 or 410 a may be usedto bring the workpiece 600 into the controlled environment of the commonmanufacturing platform 400 or 500, which controlled environment ismaintained throughout the process flow 700. In the common manufacturingplatform 400 or 500 of an embodiment of the invention, in operation 702,the workpiece 600, which has been received into the controlledenvironment, is loaded by the transfer module 410 or 410 a into afilm-forming module 420 hosted on the common manufacturing platform 400.

Referring to FIGS. 6B and 7, in operation 704, in the film-formingmodule 420, a first thin film 620 is conformally deposited over themandrel pattern 610 and underlying layer 606. The first thin film 620can comprise an oxide, a nitride, silicon, or any combination thereof,for example, silicon nitride, silicon oxide, or silicon oxynitride.

Then, without leaving the controlled environment, e.g., without breakingvacuum, transfer modules 410 or 410 a and 410 b are used to transfer theworkpiece 600 to an etching module 430 hosted on the commonmanufacturing platform 400 or 500, e.g., in platform 400, transfermodule 410 a removes the workpiece 600 from film-forming module 420 andtransfers it to transfer module 410 b, which then delivers the workpieceinto first etching module 430 a. In operation 706, the first thin film620 is etched in first etching module 430 or 430 a to leave behind thefirst thin film 620 on sidewalls of the mandrel pattern 110, whichremaining thin film 620 forms first sidewall spacers 622, as shown inFIG. 6C. For example, operation 706 may be a first spacer reactive ionetch (RIE) process that creates the first sidewall spacers 622.

Referring to FIGS. 6D and 7, in operation 708, and again without leavingthe controlled environment, e.g., without breaking vacuum, a second thinfilm 630 is conformally deposited over the first sidewall spacers 622,mandrel pattern 610 and underlying layer 606. The second thin film 630can comprise an oxide, a nitride, silicon, or any combination thereof,for example, titanium oxide. The deposition may be performed in the samefilm-forming module 420 used in operation 704 or in a secondfilm-forming module 420 or 422 hosted on the common manufacturingplatform 400 or 500. A transfer module 410 is used to transfer theworkpiece 600 from the first etching module 430 to the secondfilm-forming module 420 or 422 without breaking vacuum. It may be notedthat common manufacturing platform 500 could be modified to add afilm-forming module 420 in each of lines 440 and 450 between the firstand second etching modules 430 to accommodate operation 708.

Then, without leaving the controlled environment, e.g., without breakingvacuum, one or more transfer modules 410 are used to transfer theworkpiece 600 to a second etching module 430 hosted on the commonmanufacturing platform 400 or 500. In operation 710, the second thinfilm 630 is etched in second etching module 430 to leave behind thesecond thin film 630 on sidewalls of the first sidewall spacers 622,which remaining second thin film 630 forms second sidewall spacers 632,as shown in FIG. 6E. For example, operation 710 may be a second spacerreactive ion etch (RIE) process that creates the second sidewall spacers632.

Then, without leaving the controlled environment, e.g., without breakingvacuum, one or more transfer modules 410 are used to transfer theworkpiece 600 to a third etching module 430 hosted on the commonmanufacturing platform 400 or 500. In operation 712, a spacer pullprocess is then performed, the spacer pull process selectively removingthe first sidewall spacers 622 leaving behind the remaining second thinfilm 630 that formed the second sidewall spacers 632 and the mandrelpattern 610, as shown in FIG. 6F. The spacer pull process may beperformed in the same etching module 430 used in operation 706 or 710 orin another etching module 430 hosted on the common manufacturingplatform 400 or 500. One or more transfer modules 410 are used totransfer the workpiece from one etching module to another etching module430 without leaving the controlled environment and adjustments to thecontrolled environment may be made in the transfer modules if the thirdetching module 430 operates with different parameters than the secondetching module, such as different vacuum pressures. With the firstsidewall spacers 622 removed, the second sidewall spacers 632 andmandrel pattern 610 that remain form a new feature pattern with triplethe number of features compared to the number of features or mandrels inthe mandrel pattern 610, and with one third the pitch of the firstmandrel pattern 610.

The second sidewall spacers 632 and mandrel pattern 610 may be used inan operation 714 in FIG. 7 to transfer the pattern into the underlyinglayer 606, to form the tripled pattern 608 in FIG. 6G.

Similar to the process flow 300 of FIG. 3, in the process flow 700 ofFIG. 7, the method may include performing metrology using the activeinterdiction system at any of various times throughout the integratedmethod, without leaving the controlled environment, e.g., withoutbreaking vacuum. The active interdiction system may include a singlemetrology module or workpiece measurement region on the commonmanufacturing platform 400 or 500 or may include multiple metrologymodules or workpiece measurement regions on the common manufacturingplatform 400 or 500. Each metrology operation is optional, as indicatedby the phantom lines in FIG. 7, but may be advantageously performed atone or more points in the process flow to ensure the workpiece 600 iswithin specification to reduce defectivity and EPE.

Without duplicating the detail provided in the description of theprocess flow 300, process flow 700 will now be described briefly withthe optional metrology operations. Operation 750 includes optionallyperforming metrology to obtain measurement data related to attributes ofthe incoming workpiece, such as attributes of the mandrel pattern and/oran underlying layer over which the mandrel pattern is formed and intowhich the final pattern is to be transferred, which measurement data maybe used to adjust and/or control process parameters of any one ofoperations 704-714.

Operation 752 includes optionally performing metrology to obtainmeasurement data related to attributes of the workpiece having theconformal first thin film applied, such as attributes of the first thinfilm, the mandrel pattern as affected by the thin film deposition,and/or the underlying layer into which the final pattern is to betransferred as affected by the thin film deposition, which measurementdata may be used to adjust and/or control process parameters of any oneof operations 706-718, may be used to make adjustments for subsequentworkpieces to the incoming attributes of the workpieces in operation 702or to operation 704, or may be used to repair the workpiece beforecontinued processing. In one embodiment, when the measurement dataindicates that one or more attributes do not meet a target condition,the workpiece may be transferred to a correction module to repair theconformally applied first thin film, as described above.

Operation 754 includes optionally performing metrology to obtainmeasurement data related to attributes of the workpiece having theetched first thin film forming first sidewall spacers on the sidewallsof the mandrel pattern, such as attributes of the first sidewallspacers, the mandrel pattern as affected by the spacer etch, and/or theunderlying layer as affected by the spacer etch, which measurement datamay be used to adjust and/or control process parameters of any one ofoperations 708-714, may be used to make adjustments for subsequentworkpieces to the incoming attributes of the workpieces in operation 702or to operations 704-706, or may be used to repair the workpiece beforecontinued processing. In one embodiment, when the measurement dataindicates that one or more attributes do not meet a target condition,the workpiece may be transferred to a correction module to repair thefirst sidewall spacers on the sidewalls of the mandrel pattern, asdescribed above.

Operation 756 includes optionally performing metrology to obtainmeasurement data related to attributes of the workpiece having theconformal second thin film applied, such as attributes of the secondthin film, the mandrel pattern as affected by the thin film deposition,the first sidewall spacers as affected by the thin film deposition,and/or the underlying layer as affected by the thin film deposition,which measurement data may be used to adjust and/or control processparameters of any one of operations 710-714, may be used to makeadjustments for subsequent workpieces to the incoming attributes of theworkpieces in operation 702 or to operations 704-708, or may be used torepair the workpiece before continued processing. In one embodiment,when the measurement data indicates that one or more attributes do notmeet a target condition, the workpiece may be transferred to acorrection module to repair the conformally applied second thin film, asdescribed above.

Operation 758 includes optionally performing metrology to obtainmeasurement data related to attributes of the workpiece having theetched second thin film forming second sidewall spacers on the sidewallsof the first sidewall spacers, such as attributes of the second sidewallspacers, the first sidewall spacers as affected by the spacer etch, themandrel pattern as affected by the spacer etch, and/or the underlyinglayer as affected by the spacer etch, which measurement data may be usedto adjust and/or control process parameters of any one of operations712-714, may be used to make adjustments for subsequent workpieces tothe incoming attributes of the workpieces in operation 702 or tooperations 704-710, or may be used to repair the workpiece beforecontinued processing. In one embodiment, when the measurement dataindicates that one or more attributes do not meet a target condition,the workpiece may be transferred to a correction module to repair thesecond sidewall spacers on the sidewalls of the first sidewall spacers,as described above.

Operation 760 includes optionally performing metrology to obtainmeasurement data related to attributes of the workpiece having thesecond sidewall spacers and mandrel pattern, such as attributes of thesecond sidewall spacers as affected by the spacer pull, the mandrelpattern as affected by the spacer pull, and/or the underlying layer asaffected by the spacer pull, which measurement data may be used toadjust and/or control process parameters of operation 714, may be usedto make adjustments for subsequent workpieces to the incoming attributesof the workpieces in operation 702 or to operations 704-712, or may beused to repair the workpiece before continued processing. In oneembodiment, when the measurement data indicates that one or moreattributes do not meet a target condition, the workpiece may betransferred to a correction module to repair the second sidewall spacersand/or mandrel pattern that form the tripled feature pattern.

As disclosed herein the term “metrology module” or “measurement module”refers to a module/system/sensor/tool that can make measurements on aworkpiece to detect or determine various non-conformities or variationson the workpiece, such as parametric variations, or to detect ordetermine defects on the workpiece, such as a contamination of somekind. As used herein, the term “inspection system” will generally referto the tool or system of a measurement process or module that measuresand collects data or signals associated with the measurement. Themeasurement modules will make measurements and provide data for use inthe processing platform as disclosed further herein. The terms“metrology module” and “measurement module” will be used interchangeablyherein, and generally refer to measurement or metrology or sensing toolsused to detect and measure attributes of a workpiece that are indicativeof the processing of the workpiece and the layers and devices beingformed thereon.

To move workpieces between the various processing modules, the commonmanufacturing platform will generally incorporate one or more workpiecetransfer modules that are hosted on the common manufacturing platformand are configured for the movement of the workpiece between theprocessing modules and the measurement module(s). A measurement modulemight be coupled with the workpiece transfer module similar to aprocessing module. In some embodiments of the invention, as disclosedherein, a measurement module or the inspection system associatedtherewith is incorporated with or inside a transfer module to providefor measurement or metrology as the workpiece is moved betweenprocessing modules. For example, a measurement module, or a portionthereof, might be positioned inside an internal space of the transfermodule. Herein, the combination transfer and measurement apparatus willbe referred to as a transfer measurement module (“TMM”).

In one embodiment, the common manufacturing platform including bothprocessing chambers and measurement modules is actively controlled by asystem that processes the measured data associated with an attribute onthe workpiece and uses the measured data for controlling movement andprocessing of the workpiece in a processing sequence. In accordance withembodiments of the invention, the control system uses measured data andother data to perform corrective processing based in part on themeasured data to provide active interdiction of the processing sequenceto correct non-conformities or defects. More specifically, an activeinterdiction control system is hosted on the common manufacturingplatform and is configured to perform corrective processing based inpart on the measured data, wherein the corrective processing of theworkpiece might be performed in the processing modules of the platformthat are upstream or downstream in the process sequence to addresssituations where non-conformities or defects are detected. In anembodiment of the invention, the workpiece is maintained in a controlledenvironment, such as under vacuum, for example. That is, on the commonmanufacturing platform, the processing modules and the measurementmodule operate in a controlled environment, and the workpiece transfermodule transfers the workpiece between the plurality of processingmodules in the processing sequence and one or more measurement moduleswithout leaving the controlled environment.

As used herein, the term “active interdiction” refers generally to thecontrol system as implemented for capturing measurement/metrology datain real time with respect to various fabrication processes to obtaindata on workpiece attributes and thereby detect non-conformities ordefects and the corrective aspects of the control to correct orameliorate the non-conformities or defects. The active interdictioncontrol system uses the data for correction and amelioration of variousnon-conformities in the semiconductor fabrication process by activelyvarying the processing sequence and/or the operation of modules thatperform process steps. Thus, the active interdiction control system alsointerfaces with one or more transfer modules (e.g., 410) used to moveworkpieces through the process. The active interdiction control system(822 in FIG. 8 and 922 in FIGS. 9A-9D, as further described below)coordinates the data collection and data analysis and detection ofnon-conformities with the fabrication process and further directs theactions of multiple processing modules so as to address thenon-conformities or defects that are detected. The active interdictioncontrol system is implemented generally by one or more computer orcomputing devices as described herein that operate a specially designedsets of programs such as deep learning programs or autonomous learningcomponents referred to collectively herein as active interdictioncomponents. As may be appreciated, the active interdiction controlsystem may incorporate multiple programs/components to coordinate thedata collection from various measurement modules and the subsequentanalysis. The active interdiction control system interfaces with themultiple processing modules in the common manufacturing platform inorder to address various measured non-conformities/defects to correct orameliorate the non-conformities/defects. The active interdiction controlsystem will thereby control one or more of the processing modules andthe processing sequence to achieve the desired results of the invention,which may be referred to as the target conditions or predeterminedthresholds.

The active interdiction control system also controls the transfermodules in order to move the workpieces to upstream and/or downstreamprocessing modules when non-conformities/defects are detected. That is,depending upon what is detected, the system of the invention may movethe workpiece further along in the processing sequence, or may directthe workpiece to a correction module or to an upstream processing moduleto correct or otherwise address a detected non-conformity or defect. Assuch, feedforward and feedback mechanisms are provided through thetransfer modules to provide the active interdiction of the invention.Furthermore, the processing sequence might be affected upstream ordownstream for future workpieces.

The active interdiction features of the invention improve performance,yield, throughput, and flexibility of the manufacturing process usingrun-to-run, wafer-to-wafer, within the wafer and real-time processcontrol using collected measurement/metrology data. The measured data iscollected, in real time during the processing, without removing theworkpiece/substrate/wafer from the controlled processing environment. Inaccordance with one feature of the invention, in a common manufacturingplatform, the measurement data may be captured while the substrateremains in a controlled environment, such as under vacuum, for example.That is, the workpiece transfer module(s) are configured fortransferring the workpiece between the plurality of processing modulesand the measurement modules without leaving the controlled environment.The active interdiction control can provide a multivariate, model-basedsystem that is developed in conjunction with feed-forward and feedbackmechanisms to automatically determine the optimal recipe for eachworkpiece based on both incoming workpieces and module or tool stateproperties. The active interdiction control system uses fabricationmeasurement data, process models and sophisticated control algorithms toprovide dynamic fine-tuning of intermediate process targets that enhancefinal device targets. The interdiction system enables scalable controlsolutions across a single chamber, a process tool, multi-tools, aprocess module and multi-process modules on a common manufacturingplatform using similar building blocks, concepts, and algorithms asdescribed herein.

FIG. 8 is a schematic diagram of another system for implementing anembodiment of the present invention on a common manufacturing platform800. The platform 800 incorporates a plurality of processingmodules/systems for performing integrated workpiece processing andworkpiece measurement/metrology under the control of an activeinterdiction control system 822 according to embodiments of theinvention. FIG. 8 illustrates an embodiment of the invention wherein oneor more workpiece measurement modules are coupled together with one ormore workpiece processing modules through one or more transfer modules.In that way, in accordance with features of the invention, an inspectionof the workpiece may be made to provide the measurement data associatedwith an attribute of the workpiece, such as regarding materialproperties of the workpiece and the various thin films, layers andfeatures that are formed on the workpiece while the workpiece remainswithin the common manufacturing platform. As discussed herein,measurements and analysis may be made immediately upon completion ofprocessing steps, such as an etch or deposition step, and themeasurement data gathered may be analyzed and then used within thecommon manufacturing platform to address any measurements or featuresthat are out of specification or non-conformal or represent a defectwith respect to the workpiece design parameters. The workpiece does notneed to be removed from the common manufacturing platform to takecorrective action, but rather, can remain under the controlledenvironment.

Referring to FIG. 8, common manufacturing platform 800 isdiagrammatically illustrated. Platform 800 includes a front-end module802 for introducing one or more workpieces into the manufacturingplatform. As is known, the front-end module (FEM) may incorporate one ormore cassettes holding the workpieces. The front-end module may bemaintained at atmospheric pressure but purged with an inert gas toprovide a clean environment. One or more workpieces may then betransferred into a transfer module 810, such as through one or moreload-lock chambers (not shown) as discussed herein. The transfer modulesof FIG. 8 are transfer measurement modules (TMM) that includemeasurement tools or inspection systems integrated therein for capturingdata from a workpiece. Multiple TMM's 810 may be interfaced forproviding movement of a workpiece through a desired sequence. Thetransfer measurement modules 810 are coupled with a plurality ofprocessing modules. Such processing modules may provide variousdifferent processing steps or functions and may include one or more etchmodules 830, one or more film-forming modules 820, one or more cleaningmodules 840, and one or more measurement modules 812 a, 812 b, 812 c,812 d. In accordance with embodiments of the invention as disclosedfurther herein, measurement modules may be accessed through the transfermodules 810 before or after each processing step. In one embodiment, themeasurement modules, such as 812 c, 812 d, are located outside of thetransfer modules 810 and are accessed to insert and receive workpiecessimilar to the various processing modules and may be referred to hereinas metrology modules that reside within the controlled environment ofthe common manufacturing platform 800. Alternatively, measurementmodules or at least a portion thereof, such as modules 812 a, 812 b, maybe located in a respective transfer module. More specifically, all or aportion of a measurement module 812 a, 812 b is located in a transfermodule 810 to define a measurement region therein where a workpiecemight be positioned for measurement during a transfer process. Themeasurement region is located in a dedicated area of the transfer module810 and is accessible by the transfer mechanism of the transfer modulefor positioning the workpiece. As noted, this makes the transfer moduleessentially a transfer measurement module (TMM) as discussed herein.

Generally, the transfer module defines a chamber therein that houses atransfer robot that is capable of moving workpieces, under vacuum,through various gate valves and access or transfer ports into variousprocessing modules or measurement modules. By maintaining themeasurement modules on the common manufacturing platform 800, they arereadily accessed, such as between one or more of the processing steps toprovide the necessary measured analytical data on-the-fly that will beused to address any workpiece out of specification or otherwisenon-conformal with the workpiece design plans for a particular workpieceor to address detectable defects. In that way, real time data isprovided to allow a fabricator to recognize problems early in the systemso that remedial action may be taken in the current processing sequence,such as in a following processing step, in a previous processing step,and/or in a future processing step depending upon the captured data andthe detected non-conformities or defects. In that way, productivity andefficiency may be increased, process monitoring overhead may be reduced,and wasted product, in the form of rejected or ejected workpieces may bereduced. This all provides a significant cost savings to a fabricator ordevice maker.

As noted, in one embodiment of the invention that incorporates theactive interdiction control system 822, one or more measurement modulesare hosted on a common manufacturing platform with processing modulesfor providing measured data regarding an attribute of the workpiece. Thedata is used by the active interdiction control system 822 for detectingnon-conformities and for performing corrective processing of theworkpiece when non-conformities are detected. The corrective processingis performed upstream and/or downstream in the process sequence whennon-conformities are detected.

Referring to FIG. 9A, an exemplary common manufacturing platform 900suitable for practicing a method of ASD is illustrated. The commonmanufacturing platform 900 incorporates multiple modules and processingtools for the processing of semiconductor substrates for the fabricationof integrated circuits and other devices. The common manufacturingplatform 900 incorporates one or more metrology/measurement modules thatare incorporated within the common manufacturing platform 900 along withthe processing modules. For example, the platform 900 may incorporate aplurality of processing modules that are coupled to a transfer module asshown. In some embodiments, a measurement module or tool is alsopositioned, at least partially, inside the transfer module. As such, aworkpiece may be processed and then transferred immediately to ameasurement module in order to collect various fabrication dataassociated with attributes of the workpiece that is further processed bythe active interdiction control system. The active interdiction controlsystem gathers data from the processing and measurement modules andcontrols a process sequence that is executed on the common manufacturingplatform through the selective movement of the workpiece and control ofone or more of the plurality of processing modules. Furthermore, theprocessing system of platform 900 may transfer a workpiece inside thechamber of the transfer module and between the various processingmodules and the measurement/metrology modules without leaving thecontrolled environment of the common manufacturing platform 900. Theactive interdiction control system controls the sequential process flowthrough the various processing modules utilizing information that isderived from workpiece measurements obtained from the one or moremeasurement modules. Furthermore, the active interdiction control systemincorporates processing modules in-situ measurements and data to controlthe sequential process flow through the platform 900. The on-substratemeasurement data obtained in the controlled environment may be utilizedalone or in combination with the in-situ processing module measurementdata for process flow control and improvement of the process inaccordance with the invention.

Turning again to FIG. 9A, common manufacturing platform 900 contains afront-end module 902 to introduce workpieces into the controlledenvironment. The exemplary platform 900 includes a plurality ofprocessing modules 920 a-920 d and one or more measurement/metrologymodules 916 organized around the periphery of a workpiece transfermodule 910. Common manufacturing platform 900 includes cassette modules904 and load-lock chambers 908 coupled to front-end module 902. Thefront-end module 902 is generally maintained at atmospheric pressure,but a clean environment may be provided by purging with an inert gas.Load-lock chambers 908 are coupled to the centralized workpiece transfermodule 910 and may be used for transferring workpieces from thefront-end module 902 to the workpiece transfer module 910 for processingin the controlled environment of the platform 900.

The workpiece transfer module 910 may be maintained at a very low basepressure (e.g., 5×10-8 Torr, or lower) or constantly purged with aninert gas. In accordance with the invention, a measurement/metrologymodule 916 may be operated under atmospheric pressure or operated undervacuum conditions. In accordance with one embodiment, the measurementmodule 916 is kept at vacuum conditions and the wafer is processed inplatform 900 and measured without leaving vacuum. As disclosed furtherherein, the metrology module may include one or more inspection systemsor analytical tools that are capable of measuring one or more materialproperties or attributes of a workpiece and/or of the thin films andlayers deposited on the workpiece or the devices formed on theworkpiece. As used herein, the term “attribute” is used to indicate ameasurable feature or property of a workpiece, layer on a workpiece,feature or device on a workpiece, etc. that is reflective of theprocessing quality of the processing sequence. The measured dataassociated with an attribute is then used to adjust the process sequenceby analyzing the measured data along with other in-situ processing datathrough the active interdiction control system. For example, themeasured attribute data reflects non-conformities or defects on theworkpiece for providing corrective processing.

FIG. 9A illustrates essentially a single measurement module 716.However, the particular common manufacturing platform 900 mayincorporate a plurality of such measurement modules that areincorporated around one or more workpiece transfer systems, such as theworkpiece transfer module 910. Such measurement modules 916 may bestand-alone modules that are accessed through the transfer module 910like a processing module. Such stand-alone modules will generallyincorporate inspection systems therein that are configured to engage aworkpiece that is positioned in a measurement region of the module andto measure data associated with an attribute of the workpiece.

In an alternative embodiment of the invention, a measurement modulemight be implemented in a measurement region located within a dedicatedarea of an internal space of the transfer chamber defined by thetransfer module 910. Still further, a measurement module might beincorporated wherein at least a portion of the measurement module ispositioned inside of an internal space of a workpiece transfer module,and other components of the measurement module or the specificinspection system of the measurement module are incorporated outside ofthe workpiece transfer module and interfaced through an aperture orwindow into a dedicated area of the internal space that forms themeasurement region in which a workpiece is located or through which aworkpiece will pass.

The measurement modules of the inventive system and platform include oneor more inspection systems that are operable for measuring dataassociated with an attribute of the workpiece. Such data may beassociated with one or more attributes that reflect the quality of theprocessing sequence and the quality of the layers and features anddevices that are being formed on a workpiece. The collected measurementdata is then analyzed, along with processing module data, by an activeinterdiction control system for detecting various non-conformitiesand/or defects on the workpiece or workpiece layers/features. The systemthen provides for corrective processing of the workpiece, such as inupstream or downstream processing modules in the process sequence toameliorate/correct the non-conformities or defects and improve theoverall process.

In accordance with embodiments of the invention, the measurements takenby the measurement module or inspection systems thereof and the datagenerated is associated with one or more attributes of a workpiece. Forexample, the attribute measured may include, for example, on or more of:a layer thickness, a layer conformality, a layer coverage, a layerprofile of a layer on the workpiece, an edge placement location, an edgeplacement error (EPE) for certain features, a critical dimension (CD), ablock critical dimension (CD), a grid critical dimension (CD), a linewidth roughness (LWR), a line edge roughness (LER), a block LWR, a gridLWR, a property relating to selective deposition process(es), a propertyrelating to selective etch process(es), a physical property, an opticalproperty, an electrical property, a refractive index, a resistance, acurrent, a voltage, a temperature, a mass, a velocity, an acceleration,or some combination thereof associated with the fabricated electronicdevices on the workpiece. The list of measured attributes for generatingmeasurement data for the invention is not limited and could includeother attribute data that might be used for processing a workpiece andfabricating devices.

As further discussed herein, the measurement modules and/or inspectionssystems used for providing attribute data may implement a number oftools and methods for measurement for providing the measurement andmetrology of the invention. The measurement modules and/or inspectionssystems may include optical methods, or non-optical methods. Opticalmethods can include high-resolution optical imaging and microscopy(e.g., bright-field, dark-field, coherent/incoherent/partially coherent,polarized, Nomarski, etc.), hyperspectral (multi-spectral) imaging,interferometry (e.g., phase shifting, phase modulation, differentialinterference contrast, heterodyne, Fourier transform, frequencymodulation, etc.), spectroscopy (e.g., optical emission, lightabsorption, various wavelength ranges, various spectral resolutions,etc.), Fourier transform Infrared spectroscopy (FTIR) reflectometry,scatterometry, spectroscopic ellipsometry, polarimetry, refractometers,etc. Non-optical methods can include electronic methods (e.g., RF,microwave, etc.), acoustic methods, photo-acoustic methods, massspectroscopy, residual gas analyzers, scanning electron microscopy(SEM), transmission electron microscopy (TEM), atomic force microscopy(AFM), energy dispersive x-ray spectroscopy (EDS), x-ray photo-emissionspectroscopy (XPS), etc. For example, the inspection system used formeasuring data that is associated with an attribute of the workpiece mayuse one or more of the following techniques or devices: optical thinfilm measurement, such as reflectometry, interferometry, scatterometry,profilometry, ellipsometry; X-Ray measurements, such as X-rayphoto-emission spectroscopy (XPS), X-Ray fluorescence (XRF), X-Raydiffraction (XRD), X-Ray reflectometry (XRR); ion scatteringmeasurements, such as ion scattering spectroscopy, low energy ionscattering (LEIS) spectroscopy, auger electron spectroscopy, secondaryion mass spectroscopy, reflection absorption IR spectroscopy, electronbeam inspection, particle inspection, particle counting devices andinspection, optical inspection, dopant concentration metrology, filmresistivity metrology, such as a 4-point probe, eddy currentmeasurements; a micro-balance, an accelerometer measurement, a voltageprobe, a current probe, a temperature probe for thermal measurements, ora strain gauge. The list of measurement techniques or devices forgenerating measurement data for the invention is not limited and couldinclude other techniques or devices that might be used for obtaining theuseful data for processing a workpiece and fabricating devices inaccordance with the invention.

The measurement modules and/or inspection systems may take measurementson various substrate or workpiece structures passed through theprocessing system including either product workpieces, or non-productsubstrates, i.e., a monitoring substrate. On product workpieces,measurements can be performed on designated target structures, bothdevice-like structures and device-unlike structures, on specified deviceareas, or on arbitrary areas. The measurements may also be performed ontest structures created on the workpiece, that might include pitchstructures, area structures, density structures, etc.

Referring again to FIG. 9A, coupled to the transfer chamber 910 are aplurality of processing modules 920 a-920 d that are configured forprocessing substrates, such as semiconductor or silicon (Si) workpieces.The Si workpieces can, for example, have a diameter of 150 mm, 200 mm,300 mm, 450 mm, or larger than 450 mm. The various processing modulesand measurement modules all interface with the workpiece transfer module910 through appropriate gate access ports with valves G, for example.According to one embodiment of the invention disclosed herein, the firstprocessing module 920 a might perform a treatment process on aworkpiece, and the second processing module 920 b might form aself-aligned monolayer (SAM) on a workpiece. The third processing module920 c may deposit a film on a workpiece by a suitable selectivedeposition process, and the fourth processing module 920 d mayselectively etch or clean a workpiece.

The transfer module 910 is configured for transferring workpiecesbetween any of the processing modules 920 a-920 d and then into themetrology module 916 either before or after a particular processingstep. FIG. 9A further shows the gate valves G that provide isolation atthe access ports between adjacent processing chambers/tool components.As depicted in the embodiment of FIG. 9A, the processing modules 920a-920 d and the metrology module 916 may be directly coupled to thetransfer chamber 910 by the gate valves G and such direct coupling cangreatly improve substrate throughput in accordance with the invention.

The common manufacturing platform 900 includes one or more controllersor control systems 922 that can be coupled to control the variousprocessing modules and associated processing chambers/tools depicted inFIG. 9A during the integrated processing and measurement/metrologyprocess as disclosed herein. The controller/control system 922 can becoupled to one or more additional controllers/computers/databases (notshown) as well. Control system 922 can obtain setup and/or configurationinformation from an additional controller/computer or a server over anetwork. The control system 922 is used to configure and run any or allof the processing modules and processing tools and to gather data fromthe various measurement modules and in-situ data from the processingmodules to provide the active interdiction of the invention. Thecontroller 922 collects, provides, processes, stores, and displays datafrom any or all of the processing modules and tool components. Thecontrol system 922, as described further herein, can comprise a numberof different programs and applications and processing engines to analyzethe measured data and in-situ processing data and to implementalgorithms, such as deep learning networks, machine learning algorithms,autonomous learning algorithms and other algorithms for providing theactive interdiction of the invention.

As described further herein, the active interdiction control system 922can be implemented in one or more computer devices having amicroprocessor, suitable memory, and digital I/O port and is capable ofgenerating control signals and voltages that are sufficient tocommunicate, activate inputs to the various modules of the platform 900,and exchange information with the substrate processing systems run onthe platform 900. The control system 922 monitors outputs from theprocessing system of the platform 900 as well as measured data from thevarious measurement modules of the platform to run the platform. Forexample, a program stored in the memory of the control system 922 may beutilized to activate the inputs to the various processing systems andtransfer systems according to a process recipe or sequence in order toperform desired integrated workpiece processing.

The control system 922 also uses measured data as well as in-situprocessing data output by the processing modules to detectnon-conformities or defects in the workpiece and provide correctiveprocessing. As discussed herein, the control system 922 may beimplemented as a general-purpose computer system that performs a portionor all of the microprocessor-based processing steps of the invention inresponse to a processor executing one or more sequences of one or moreinstructions contained in a program in memory. Such instructions may beread into the control system memory from another computer readablemedium, such as a hard disk or a removable media drive. One or moreprocessors in a multi-processing arrangement may also be employed as thecontrol system microprocessor element to execute the sequences ofinstructions contained in memory. In alternative embodiments, hard-wiredcircuitry may be used in place of or in combination with softwareinstructions for implementing the invention. Thus, embodiments are notlimited to any specific combination of hardware circuitry and softwarefor executing the metrology driver processes of the invention asdiscussed herein.

The active interdiction control system 922 may be locally locatedrelative to the platform 900, or it may be remotely located relative tothe platform 900. For example, the controller 922 may exchange data withthe platform 900 using at least one of a direct connection, an intranetconnection, an Internet connection or a wireless connection. The controlsystem 922 may be coupled to an intranet at, for example, a customersite (i.e., a device maker, etc.), or it may be coupled to an intranetat, for example, a vendor site (i.e., an equipment manufacturer).Additionally, for example, the control system 922 may be coupled toother systems or controls through an appropriate wired or wirelessconnection. Furthermore, another computer (i.e., controller, server,etc.) may access, for example, the control system 922 to exchange datavia at least one of a direct wired connection or a wireless connection,such as an intranet connection, and/or an Internet connection. As alsowould be appreciated by those skilled in the art, the control system 922will exchange data with the modules of the common manufacturing platform900 via appropriate wired or wireless connections. The processingmodules may have their own individual control systems (not shown) thattake input data for control of the processing chambers and tools andsub-systems of the modules and provide in-situ output data regarding theprocess parameters and metrics during the processing sequence.

With specific reference to FIGS. 9A and 9B, and in accordance with oneembodiment, measurement data may be obtained in a measurement/metrologymodule 916 that is a separate module on the platform 900 coupled to thetransfer module 910. Generally, the transfer module 910 has a chamberthat incorporates one or more transfer mechanisms or robots 914 thatwill handle and move workpieces through the internal space of thechamber and into and out of the processing module in the processingsequence.

More specifically, the transfer mechanism 914 is positioned inside ofthe internal space 913 of the transfer module 910 that can define acontrolled environment and is configured for moving the workpiecesthrough the internal space and environment and selectively in and out ofthe plurality of processing modules 920 a-920 d and the measurementmodules 916 or into and out of a measurement region in a dedicated areaof the internal space in order for a measurement inspection system tomeasure data. In accordance with one feature of the invention, becausethe internal space 913 of the transfer module 910 and processing modules920 a-920 d and measurement modules 916 are coupled together on thecommon manufacturing platform 900, the controlled environment may bemaintained for the workpiece generally through most of or all of themeasurement and processing sequence. Such a controlled environment couldinvolve a vacuum environment or an inert gas atmosphere in the transfermodule or measurement module.

The transfer module 910 includes a plurality of access ports or sideports, each with a suitable gate G, through which a workpiece is movedto and from the plurality of processing modules 920 a-920 d. To providethe necessary processing sequence for efficient through-put on platform900, the plurality of processing modules 920 a-920 d includes modulesthat handle a variety of workpiece processing steps on the commonplatform, including one or more etching modules and one or morefilm-forming or deposition modules. The measurement module 916, asillustrated in FIG. 7A is coupled with the transfer module 910 also atone of the side or access ports through a suitable gate G. In otherembodiments, the measurement module is coupled with the transfer moduleat a port formed in the top of the transfer module. In still furtherembodiments as described herein, the transfer module acts as ameasurement module as well wherein at least a portion of the measurementmodule for capturing measurement data is incorporated or positionedinside of an internal space of the transfer module. The transfermeasurement module (TMM) in such an embodiment, as illustrated in FIGS.9C-9D, includes a measurement region located within a dedicated area ofthe internal space of the transfer module.

The active interdiction control system 922 collects workpiecemeasurement data generally on-the-fly as the substrate moves in theprocessing sequence between one or more of the processing modules andthe measurement/metrology module 916. The data is captured and thenanalyzed and processed to detect non-conformities and defects andprovide corrective processing as discussed herein. The activeinterdiction control system 922 provides the necessary control of theprocessing steps of the sequence to make control adjustments to variousfabrication processing steps as performed in order to correct for thedetected non-conformities/defects. Adjustments may be made to processsteps and processing modules that precede or are upstream of thecaptured measurement data and/or process steps that follow or aredownstream of the measurement data in sequence. Alternatively, asuitable corrective action or corrective processing might includeejection of the workpiece from the platform 900 in order to not wastefurther time and materials on a workpiece which cannot be saved.

Referring to FIG. 9B, one exemplary measurement module 916 isillustrated that incorporates an inspection system 930 for makingmeasurements on the workpiece in real-time with respect to theprocessing sequence executed on common manufacturing platform 900.

The inspection system 930 measures data associated with an attribute ofthe workpiece, as discussed herein. The inspection system 930incorporates one or more signal sources 932 that direct a measurementsignal 934 toward a workpiece 936. Incident signals 934 are reflected orscattered from the surface of the workpiece 936 and the scatteredsignals 935 are captured by the detector 940. The detectors 940 generatemeasurement data 950 which may then be directed to the activeinterdiction control system 922 as described herein. In one embodiment,the workpiece 936 is positioned by transfer mechanism 914 on ameasurement platform 938 that may be translated side-to-side and up anddown and rotated as indicated by the arrows in FIG. 9B so that ameasurement signal 934 may be directed to various proper positions onthe workpiece 936.

That is, in the embodiment of FIG. 9B, the measurement module includes aseparate support mechanism 938 for supporting a workpiece 936 positionedin the measurement module 916. The inspection system engages the supportmechanism 938 for measuring data associated with a workpiece attributesupported on the support mechanism. In such a scenario, the supportmechanism 938 in the measurement module 916 is generally separate fromthe transfer mechanism that otherwise moves the workpiece 936 andpositions it on the support mechanism.

The separate support mechanism translates the workpiece 936, such asthrough vertical and/or horizontal movement and also may rotate theworkpiece 936 to provide at least two degrees of freedom for measuringdata associated with an attribute of the workpiece 936 as discussedherein. The support mechanism may also incorporate a temperature controlelement therein for controlling workpiece temperature. Therefore, in theembodiment of FIG. 9B, the support mechanism provides the support andmovement of the workpiece 936 necessary for the measurement of dataafter the workpiece 936 is positioned thereon by the transfer mechanism.In an alternative embodiment, the transfer mechanism may provide thefunction of supporting and moving the workpiece 936 for engagement withthe inspection system 930 for measuring data associated with anattribute on the workpiece 936.

The captured measurement data 950 may then be directed to control system922 and further evaluated and analyzed to determine a particular actionfor the measured workpiece. If the measurement data indicates that themeasured parameters are within specification of the desired design andfabrication process, and/or there are no actionable detected defects,the workpiece may proceed as normal through the process flow within theplatform 900. Alternatively, if the measured data 950 indicates that theworkpiece is beyond correction or amelioration, the workpiece might beejected from further processing. Alternatively, in accordance with anembodiment of the invention, the active interdiction control system 922may analyze the data and provide corrective processing as one or morecorrective steps to be taken for that workpiece or to be made in variousprocess steps of the overall process flow in order to correct thecurrent workpiece, and also to prevent the need for corrective action inother workpieces that are subsequently processed on the platform 900.Specifically, referring to FIG. 9B, the active interdiction controlsystem 922 may incorporate one or more processing steps and processingcomponents therein for yielding correction to the process flow. First,the necessary measurement data 950 may be captured and pre-processed asillustrated by block 954. Next, modeling and data analysis occurs on thecaptured data as well as any in-situ processing data associated with oneor more of the processing modules and process steps as indicated byblock 956. The modeling and analysis may utilize artificialintelligence, including deep learning and autonomous learning programsand components. Next, the analysis may provide corrective processcontrol wherein one or more of the processing steps and processingmodules are controlled to correct or ameliorate perceived or detectednon-conformities or defects in the layers and features that are out ofspecification with respect to the overall design for the workpiecefabrication. The corrective process control of block 958 may be providedto one or more of the processing steps or processing modules and it maybe applied to one or more processing steps that are previous in time(upstream) to the capture of the measurement data 950 or may be appliedto one or more of the process steps to follow (downstream) the captureof the measurement data 950 within the overall substrate fabricationaccording to the desirable design. The active interdiction controlsystem 922, and its processes as indicated by blocks 954, 956 and 958may be incorporated in software run by one or more computers of thecontrol system 922 and/or components of that system.

In accordance with embodiments of the invention, the inspection systemsfor obtaining measurement data engage the workpiece by performingcontact measurement or metrology or non-contact measurement or metrologydepending on the attribute measured or the type of measurement. Acombination of both contact and non-contact measurement might be used.Depending on the location of the inspection system, portions of theinspection system may be positioned partially or entirely inside aninternal space or chamber of a module. In the embodiment of FIG. 9A asdisclosed herein, dedicated measurement modules 916 may entirely containthe inspection system. Alternatively, a portion of a measurement modulemight be positioned inside of an internal space of a chamber, such asinside an internal space of a workpiece transfer module, with anotherportion of the measurement module located outside of the chamber. Suchan embodiment is illustrated in FIG. 9D for example wherein a transfermeasurement module is illustrated using a measurement region locatedwithin a dedicated area of the transfer chamber internal space and theinspection system is configured for engaging a workpiece positioned inthe measurement region for measuring data associated with an attributeon the workpiece.

Support mechanism 938 or transfer mechanism 914 holding workpiece 936may be translated and rotated to provide measurements of various areason the workpiece 936. In that way, measurement data may be captured atvarious portions or segments of the entire workpiece. Thus, continuousmeasurements or point-by-point measurements are possible therebyreducing the overall measurement time and processing time.

For example, the inspection system measures data over a portion of theworkpiece that is equal to or exceeding 1 square centimeter.Alternatively, the inspection system measures or images a substantiveportion of the workpiece that is equal to or exceeding 90% of theworking surface area of the workpiece. As noted, the inspection systemmay perform a measurement at plural discrete locations on the workingsurface of the workpiece or may perform a continuous sequence ofmeasurements across a portion of the workpiece. For example, theinspection system may perform a measurement along a path extendingacross or partially across the workpiece. Such a path may include aline, a sequence of lines, an arc, a circular curve, a spiral curve, anArchimedean spiral, a logarithmic spiral, a golden spiral, or somecombination thereof. Also, there may be several inspection systemswherein source/detector pairs 932, 940 may each represent a differentinspection signal from a different inspection system and may bedifferent forms of signals. For example, one source/detector pair 932,940 might use an optical signal while another source/detector pair 932,940 might use an electromagnetic signal, depending on the inspectionsystem.

The inspection system(s) can perform multiple measurements of attributeson a workpiece while the workpiece is in a measurement module or indedicated area of a transfer measurement module as discussed herein. Themeasurements may be made simultaneously in time. That is, differentinspection systems might make measurements at the same time.Alternatively, the various inspection systems might operate at differenttimes. For example, it may be necessary to move or position theworkpiece in one position for one type of measurement or inspectionsystem, and then move or position the workpiece for another measurementby the same or a different type of inspection system.

The inspection system(s) may be non-contact systems for providingnon-contact measurement and metrology. Alternatively, one or moreinspection systems of a measurement module or transfer measurementmodule might use a contact sensor that may be moved and positioned at asurface of the workpiece to make a measurement. The inspection systemsprovided in accordance with the invention may incorporate a combinationof contact inspection systems and non-contact inspection systems forgathering measurement data associated with an attribute of theworkpiece.

As described above, the inspection system as implemented in ameasurement module or in a transfer measurement module may be stationarywhile the support mechanism or workpiece transfer mechanism moves theworkpiece to engage with the inspection system and to take measurementsin different areas of the workpiece. Alternatively, the inspectionsystem 930, or some portion thereof, is movable with respect to theworkpiece support mechanism 938, the workpiece transfer mechanism 914and the module. The inspection system might be configured to translateand/or rotate with respect to the stationary workpiece to obtainmeasurement data from areas of the workpiece.

In other embodiments of the invention, the inspection system may beembedded in or part of a workpiece support mechanism. The inspectionsystem 930 might be mounted or supported on the support mechanism 938.Then, when the workpiece is positioned on the support mechanism, it willbe in a proper position for engagement by the inspection system. Aninspection system 930 might be embedded in the support mechanism so asto sit below or otherwise proximate to a positioned workpiece to providemeasurement data associated with a mass measurement or a temperaturemeasurement of the workpiece, for example.

FIG. 9C illustrates a common manufacturing platform 900′ incorporating atransfer module 910′ in accordance with one embodiment the inventionthat utilizes a dedicated area to form a measurement region whereinmeasurement data may be gathered from a workpiece during transit. Inthat way, as noted herein, the workpiece can be processed and measuredwhile remaining within a controlled environment, such as a vacuumenvironment. The workpiece does not need to leave the environment of theplatform 900′ for determining how the process is proceeding and fordetecting any non-conformities or defects. Accordingly, the embodimentas illustrated in FIG. 9C forms a transfer measurement module (TMM) thatmay be utilized with one or more processing modules or as part of acommon manufacturing platform. Furthermore, multiple transfermeasurement modules may be utilized and interfaced together to cooperateand form a larger common manufacturing platform.

The inspection systems incorporated within a transfer measurement module(TMM) operate in and are similar to other inspection systems asdescribed herein. Such inspection systems as illustrated in FIG. 9D, forexample, only illustrate certain inspection systems. However, otherinspection systems and features, such as those discussed above, wouldalso be applicable to the transfer mechanism module is illustrated inFIG. 9C. As such, some common reference numerals are utilized in FIGS.9C-9D as previously discussed herein.

The platform 900′ incorporates a workpiece transfer module 910′ thatprovides measurement/metrology data. The transfer measurement module(TMM) 910′ includes a workpiece transfer mechanism, such as in the formof a handling robot 914 within the internal space of a transfer chamber913. The transfer mechanism 914 is operable as in platform 900 to moveone or more or more workpieces through the transfer module 910′ andbetween various of the processing modules that are coupled to transfermodule 910′ in the common manufacturing platform. In accordance with onefeature of the invention, transfer chamber 913 defines an internal spacethat includes a dedicated area that is used for measurement. Themeasurement region 915 of the TMM 910′ is located in the dedicated area.The measurement region/area 915 is proximate to one or more inspectionsystems 930 for measurement.

More specifically, the measurement region 915 is positioned within thetransfer chamber 913 so as to not interfere with the primary purpose ofthe transfer measurement module in moving workpieces through the processsequence and into and out of various processing modules. The measurementregion defines one or more positions for placement of a workpiece formeasurement. To that end, one or more inspection systems are configuredto engage a workpiece that is positioned in the measurement region ofthe transfer chamber 913. The inspection system is then operable formeasuring data associated with an attribute on the workpiece inaccordance with the invention. As noted with the inspection systemsdisclosed herein, a support mechanism might be located within themeasurement region 915 for supporting a workpiece during the collectionof measurement data by the inspection system. Alternatively, thetransfer mechanism 914 may provide the positioning and support of theworkpiece within the measurement region 915 of the transfer chamber. Inaccordance with embodiments of the invention, the workpiece can be movedinto or through the measurement region 915 during a processing sequenceto obtain measurement data from one or more inspection systems that areassociated with that measurement region. While a single measurementregion is illustrated in FIG. 9C for illustrative purposes, multiplemeasurement regions 915 might be incorporated into the TMM 910′.

Referring to FIG. 9D, the TMM module 710′ incorporates one or moreinspection systems 930 located within a measurement region 915 andprovides the ability to obtain real-time measurements and measurementdata during a processing sequence. In one embodiment, measurement region915 within the TMM 910′ incorporates a support mechanism 938 thatreceives a workpiece from mechanism 914 for measurement inside chamber913. Measurement data is captured as the workpiece is moved betweenprocessing modules. As discussed above, alternatively, the transfermechanism or robot 914 might actually act as a support mechanism formoving the workpiece with respect to the inspection system 930 in theTMM 910′. Still further, the inspection system 930 in the TMM 910′ mightalso incorporate a stationary workpiece wherein the inspection system930 itself moves. Similarly, the inspection system 930 might beincorporated as part of or embedded with the support mechanism.

The measurement module or inspection system 930 may be entirelycontained in the TMM 910′ to make measurements. In other embodiments, aleast a portion of the measurement module or inspection system ispositioned inside of an internal space of the TMM 910′ so as to define ameasurement region within a dedicated area of the internal space asshown in FIG. 9D, while other portions may reside outside the TMM 910′.More specifically, measurement region 915 is defined and is locatedwithin a dedicated area of the internal space of the transfer chamber913. The signal source and signal detector elements of inspection system930 may be located externally of the transfer chamber internal space 913while the workpiece support mechanism 938 and transfer mechanism 914 forsupporting a workpiece 936 are contained within the transfer chamber913. To that end, the inspection signals 934 pass through an appropriateaccess port 942 that is effectively transparent to the passage of theinspection signal 934 from the inspection system 930 and into theinternal space 913 to engage workpiece 936 positioned in the measurementregion 915. As noted, the inspection signal 934 might include anelectromagnetic signal, an optical signal, a particle beam, a chargedparticle beam, or some combination of such signals. The access port 942may be appropriately formed to operate with a specific inspection systemand the sources of the inspection signal. For example, the access port942 might include a window, an opening, a valve, a shutter, and iris, orsome combination of different structures for forming the access port inorder to allow incident inspection signals to engage the workpiece 936.To that end, at least a portion of the inspection system 930 might belocated generally above a top surface of the transfer chamber 913.

Additional advantages and modifications will readily appear to thoseskilled in the art. The invention in its broader aspects is thereforenot limited to the specific details, representative apparatus andmethod, and illustrative examples shown and described. Accordingly,departures may be made from such details without departing from thescope of the general inventive concept.

What we claim:
 1. A method of self-aligned multi-patterning on asemiconductor workpiece using an integrated sequence of processing stepsexecuted on a common manufacturing platform hosting a plurality ofprocessing modules including one or more film-forming modules, one ormore etching modules, and one or more transfer modules, the integratedsequence of processing steps including: receiving a workpiece into thecommon manufacturing platform, the workpiece having a mandrel patternformed thereon comprising a number of first features separated by afirst pitch distance; using the one or more film-forming modules and theone or more etching modules, forming a sidewall spacer pattern based, atleast in part, on the mandrel pattern, the sidewall spacer patterncomprising a number of second features separated by a second pitchdistance with the first pitch distance being greater than the secondpitch distance; obtaining measurement data related to the forming of thesidewall spacer pattern, the measurement data being used to determine athickness, width, or profile of the sidewall spacer pattern; repairingthe sidewall spacer pattern by (i) selectively depositing additionalmaterial onto a structure, (ii) conformally depositing additionalmaterial onto a structure, (iii) reshaping a structure, (iv) etching astructure, (v) implanting dopant into a structure, (vi) removing andreapplying a material layer of a structure, or any combination of two ormore thereof, when the thickness, width, or profile of the sidewallspacer pattern does not meet a target thickness, width, or profile ofthe sidewall spacer pattern; and wherein the integrated sequence ofprocessing steps is executed in a controlled environment within thecommon manufacturing platform and without leaving the controlledenvironment, and wherein the one or more transfer modules are used totransfer the workpiece between the plurality of processing modules whilemaintaining the workpiece within the controlled environment.
 2. Themethod of claim 1, wherein forming the sidewall spacer patterncomprises: conformally applying a thin film over the mandrel pattern inone of the one or more film-forming modules; removing the thin film fromupper surfaces of the mandrel pattern and lower surfaces adjacent themandrel pattern in one of the one or more etching modules to leavebehind the thin film on sidewalls of the mandrel pattern thereby formingsidewall spacers; removing the mandrel pattern from the workpiece in oneof the one or more etching modules to leave behind the sidewall spacers,wherein the sidewall spacers form the sidewall spacer pattern having amultiplicity of the number of features of the removed mandrel pattern.3. The method of claim 2, wherein repairing the sidewall spacer patternincludes: repairing the conformally applied thin film by removing thethin film and reapplying the thin film, conformally applying anadditional thin film, etching the thin film, or a combination of two ormore thereof, when a conformality or uniformity of the thin film doesnot meet a target conformality or target uniformity for the thin film;and repairing the sidewall spacers by selectively depositing additionalmaterial onto the sidewall spacers, reshaping the sidewall spacers,implanting dopant into the sidewall spacers, or a combination of two ormore thereof, when the thickness, width, or profile of the sidewallspacers does not meet a target thickness, width, or profile of thesidewall spacers.
 4. The method of claim 2, wherein the one or morefilm-forming modules includes at least a first film-forming module forconformally applying the thin film, and wherein the one or more etchingmodules includes at least a first etching module for removing the thinfilm and a second etching module for removing the mandrel pattern. 5.The method of claim 2, wherein the integrated sequence furthercomprises: using the sidewall spacer pattern as another mandrel patternand repeating one or more times the processing steps of conformallyapplying a thin film, removing the thin film, and removing the othermandrel pattern, wherein each repetition multiplies the number offeatures until a target pattern is achieved.
 6. The method of claim 5,wherein the one or more film-forming modules includes at least a firstfilm-forming module for conformally applying the thin film and anadditional film-forming module for each repetition of the step ofconformally applying the thin film, and wherein the one or more etchingmodules includes at least a first etching module for removing the thinfilm, a second etching module for removing the mandrel pattern, and twoadditional etching modules for each repetition of the steps of removingthe thin film and removing the other mandrel pattern.
 7. The method ofclaim 2, wherein removing the thin film comprises alternating betweenpassivating the thin film and etching the thin film.
 8. The method ofclaim 2, wherein removing the mandrel pattern comprises alternatingbetween passivating the mandrel pattern and etching the mandrel patternuntil the features of the mandrel pattern are removed from theworkpiece.
 9. The method of claim 2, wherein the mandrel patterncomprises a material selected from a group of materials consisting ofsilicon, amorphous carbon, and a photoresist polymer.
 10. The method ofclaim 2, wherein the thin film comprises an oxide layer, a nitridelayer, or a combination thereof.
 11. The method of claim 1, whereinforming the sidewall spacer pattern comprises: conformally applying afirst thin film over the mandrel pattern in one of the one or morefilm-forming modules; removing the thin film from upper surfaces of themandrel pattern and lower surfaces adjacent the mandrel pattern in oneof the one or more etching modules to leave behind the first thin filmon sidewalls of the mandrel pattern thereby forming first sidewallspacers; conformally applying a second thin film over the first sidewallspacers and mandrel pattern in one of the one or more film-formingmodules; removing the second thin film from upper surfaces of the firstsidewall spacers and mandrel pattern and lower surfaces adjacent thefirst sidewall spacers in one of the one or more etching modules toleave behind the second thin film on sidewalls of the first sidewallspacers thereby forming second sidewall spacers; and removing the firstsidewall spacers from the workpiece in one of the one or more etchingmodules to leave behind the second sidewall spacers and mandrel patternto form a feature pattern having a multiplicity of the number offeatures of the removed mandrel pattern.
 12. The method of claim 11,wherein repairing the sidewall spacer pattern includes: repairing theconformally applied first thin film by removing the first thin film andreapplying the first thin film, conformally applying an additional thinfilm, etching the first thin film, or a combination of two or morethereof, when a conformality or uniformity of the first thin film doesnot meet a target conformality or target uniformity for the first thinfilm; repairing the conformally applied second thin film by removing thesecond thin film and reapplying the second thin film, conformallyapplying an additional thin film, etching the second thin film, or acombination of two or more thereof, when a conformality or uniformity ofthe second thin film does not meet a target conformality or targetuniformity for the second thin film; repairing the first sidewallspacers by selectively depositing additional material onto the firstsidewall spacers, reshaping the first sidewall spacers, implantingdopant into the first sidewall spacers, or a combination of two or morethereof, when the thickness, width, or profile of the first sidewallspacers does not meet a target thickness, width, or profile of the firstsidewall spacers; or repairing the second sidewall spacers byselectively depositing additional material onto the second sidewallspacers, reshaping the second sidewall spacers, implanting dopant intothe second sidewall spacers, or a combination of two or more thereof,when the thickness, width, or profile of the second sidewall spacersdoes not meet a target thickness, width, or profile of the secondsidewall spacers.
 13. The method of claim 11, wherein the one or morefilm-forming modules includes at least a first film-forming module forconformally applying the first thin film and a second film-formingmodule for conformally applying the second thin film, and wherein theone or more etching modules includes at least a first etching module forremoving the first thin film, a second etching module for removing thesecond thin film, and a third etching module for removing the firstsidewall spacers.
 14. The method of claim 11, wherein removing the firstand second thin films comprises alternating between passivating thefirst and second thin films and etching the first and second thin films.15. The method of claim 11, wherein removing the first sidewall spacerscomprises alternating between passivating the first sidewall spacers andetching the first sidewall spacers until the first sidewall spacers areremoved from the workpiece.
 16. The method of claim 1, wherein thecontrolled environment includes a vacuum environment, an inert gasatmosphere, or a combination thereof.
 17. The method of claim 16,wherein the one or more film-forming modules include a vacuumenvironment, and the one or more transfer modules transfer the workpieceinto and out of the one or more film-forming modules without breakingvacuum.
 18. The method of claim 16, wherein the one or more etchingmodules include at least one dry etching module operating with a vacuumenvironment, and the one or more transfer modules transfer the workpieceinto and out of the at least one dry etching module without breakingvacuum.
 19. The method of claim 1, wherein the one or more transfermodules further include a workpiece measurement region located within adedicated area of at least one of the one or more transfer modules, andwherein the obtaining measurement data is performed during at least oneof the transfers of the workpiece between the plurality of processingmodules by passing the workpiece into the workpiece measurement region.20. The method of claim 1, wherein the common manufacturing platformincludes one or more metrology modules, and wherein the obtainingmeasurement data is performed by transferring the workpiece into themetrology module between one or more of the processing steps of theintegrated sequence of processing steps without leaving the controlledenvironment.